SCHEMBL702749

SCHEMBL702749

CCCC(O[SiH3])C(CC)(c1ccccc1)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 1/20 0.37
GRIN1 Q05586 4/20 0.36
GRIN2A Q12879 4/20 0.36
GRIN2D O15399 3/20 0.36
GRIN2C Q14957 3/20 0.36
GRIN2B Q13224 2/20 0.36
KCNN4 O15554 1/20 0.32
MAPK1 P28482 1/20 0.31
MEN1 O00255 1/20 0.30
TTR P02766 1/20 0.30
KMT2A Q03164 1/20 0.30
AOC3 Q16853 1/20 0.30
PRSS1 P07477 1/20 0.30
CTSG P08311 1/20 0.30
CTRB1 P17538 1/20 0.30
CMA1 P23946 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702333 0.86 KCNH2 (0.44) KCNH2GRIN1GRIN2AGRIN2DGRIN2C
SCHEMBL705097 0.81 MAPK1 (0.36) KCNN4MAPK1MEN1TTRKMT2A
SCHEMBL705236 0.77 GRIN1 (0.39) KCNH2GRIN1GRIN2AGRIN2DGRIN2C
SCHEMBL2319956 0.71 MAPK1 (0.40) KCNN4MAPK1MEN1TTRKMT2A
SCHEMBL15178054 0.70 ALDH1A1 (0.35) KCNN4MAPK1MEN1TTRKMT2A
SCHEMBL708011 0.69 MAPK1 (0.39) KCNH2GRIN1GRIN2AGRIN2DGRIN2C
SCHEMBL6284917 0.69 GRIN1 (0.44) KCNH2GRIN1GRIN2AGRIN2DGRIN2C
SCHEMBL4454908 0.67 GRIN1 (0.43) KCNH2GRIN1GRIN2AGRIN2DGRIN2C
SCHEMBL416118 0.67 GRIN1 (0.47) KCNH2GRIN1GRIN2AGRIN2DGRIN2C
SCHEMBL3481511 0.67 CYP2D6 (0.35) KCNH2GRIN1GRIN2AGRIN2DGRIN2C

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed