SCHEMBL705118

SCHEMBL705118

CCCCO[SiH](OCCCC)C(C)C

nearest known ligand 0.38

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 1/20 0.38
ADRB1 P08588 1/20 0.38
ADRB3 P13945 1/20 0.38
TSHR P16473 2/20 0.33
CYP3A4 P08684 1/20 0.33
ALDH1A1 P00352 1/20 0.32
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
LMNA P02545 1/20 0.30
ATM Q13315 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706280 0.83 HSD17B10 (0.35)
SCHEMBL11250053 0.80 ADRB2 (0.35) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL2772303 0.80 ADRB2 (0.35) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL27624796 0.79 ADRB2 (0.38) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL5833766 0.78 ADRB2 (0.33) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL5833537 0.77 ADRB2 (0.36) ADRB2ADRB1ADRB3TSHRCYP3A4
SCHEMBL5834028 0.77 ADRB2 (0.32) ADRB2ADRB1ADRB3
SCHEMBL8666602 0.77 ADRB2 (0.32) ADRB2ADRB1ADRB3
SCHEMBL2247508 0.75 TSHR (0.35) ADRB2ADRB1ADRB3TSHRALDH1A1
SCHEMBL29240648 0.73 ADRB2 (0.30) ADRB2ADRB1ADRB3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-105622800-B A kind of catalytic component and its catalyst system for olefinic polyreaction 中国石油化工股份有限公司 2017-12-19 CN disclosed
CN-103185905-B Antireflection film and optical element TOTATSU CORP. (JP) 2015-12-23 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
EP-2540759-B1 Thermosetting resin composition and cured product of the same DAINIPPON INK & CHEMICALS (JP) 2014-08-06 EP disclosed
EP-2436734-B1 THERMOSETTING RESIN COMPOSITE AND CURED PRODUCT THEREOF DAINIPPON INK & CHEMICALS (JP) 2014-07-23 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-102449069-B Thermosetting resin composite and cured product thereof DAINIPPON INK & CHEMICALS 2014-02-12 CN disclosed
EP-2671920-A1 THERMOSETTING RESIN COMPOSITION, CURED PRODUCT THEREOF, AND INTERLAYER ADHESIVE FILM FOR PRINTED WIRING BOARD DIC Corporation (JP) 2013-12-11 EP disclosed
US-20130309489-A1 THERMOSETTING RESIN COMPOSITION, CURED PRODUCT OF THE SAME, AND INTERLAMINAR ADHESIVE FILM USED FOR PRINTED WIRING BOARD DIC CORPORATION (JP) 2013-11-21 US disclosed
CN-103370371-A Thermosetting resin composition, cured product thereof, and interlayer adhesive film for printed wiring board DAINIPPON INK & CHEMICALS 2013-10-23 CN disclosed
US-20100137626-A1 ORGANIC SILANE COMPOUND FOR FORMING SI-CONTAINING FILM BY PLASMA CVD AND METHOD FOR FORMING SI-CONTAINING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-03 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-7005532-B2 Process of producing alkoxysilanes TOAGOSEI CO., LTD. (JP) 2006-02-28 US disclosed
US-20060024980-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-02-02 US disclosed
US-20050020845-A1 Process of producing alkoxysilanes TOAGOSEI CO., LTD. (JP) 2005-01-27 US disclosed
EP-1428828-A1 PROCESS FOR PREPARATION OF ALKOXYSILANES TOAGOSEI CO., LTD. (JP) 2004-06-16 EP disclosed
US-4541838-A Fuel compositions ETHYL CORPORATION (US) 1985-09-17 US disclosed