SCHEMBL705408

SCHEMBL705408

CCCCC(CCCC)CC(=O)O[SiH3]

nearest known ligand 0.46

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 3/20 0.46
TSHR P16473 2/20 0.46
TDP1 Q9NUW8 2/20 0.46
ATM Q13315 1/20 0.46
RECQL P46063 1/20 0.41
CA2 P00918 6/20 0.41
ALDH1A1 P00352 3/20 0.40
TLR4 O00206 1/20 0.38
CA1 P00915 2/20 0.38
MAPK1 P28482 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.37
GPR84 Q9NQS5 3/20 0.36
FFAR1 O14842 1/20 0.36
LMNA P02545 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7758100 0.87 TDP1 (0.36) CYP3A4TSHRTDP1ATMRECQL
SCHEMBL21694553 0.79 CYP3A4 (0.50) CYP3A4TSHRTDP1ATMRECQL
SCHEMBL7059564 0.78 CYP3A4 (0.34) CYP3A4TSHRTDP1ATMRECQL
SCHEMBL2390013 0.78 ATM (0.50) CYP3A4TSHRTDP1ATMRECQL
SCHEMBL9068119 0.78 CYP3A4 (0.44) CYP3A4TSHRTDP1ATMRECQL
SCHEMBL27291358 0.77 CA2 (0.48) CYP3A4TSHRTDP1ATMRECQL
SCHEMBL23115434 0.76 ZDHHC7 (0.50) CYP3A4TSHRTDP1ATMRECQL
SCHEMBL15424091 0.76 CYP3A4 (0.47) CYP3A4TSHRTDP1ATMRECQL
SCHEMBL15027359 0.75 ZDHHC7 (0.48) CYP3A4TSHRTDP1ATMRECQL
SCHEMBL28575196 0.75 CA2 (0.48) CYP3A4TSHRTDP1ATMCA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed