SCHEMBL705517

SCHEMBL705517

CCCCCO[SiH](C[SiH](OCCCCC)OCCCCC)OCCCCC

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GBA1 P04062 1/20 0.38
THRB P10828 2/20 0.37
TSHR P16473 1/20 0.37
CA1 P00915 8/20 0.36
CA2 P00918 8/20 0.36
CA9 Q16790 8/20 0.36
CA12 O43570 3/20 0.36
MEN1 O00255 1/20 0.36
HTT P42858 1/20 0.36
KMT2A Q03164 1/20 0.36
MAPT P10636 1/20 0.36
LPAR3 Q9UBY5 6/20 0.34
LPAR2 Q9HBW0 5/20 0.34
LPAR1 Q92633 2/20 0.34
CA3 P07451 2/20 0.34
CA4 P22748 2/20 0.34
CA6 P23280 2/20 0.34
CA5A P35218 2/20 0.34
CA7 P43166 2/20 0.34
CA14 Q9ULX7 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703983 0.92 ADRB2 (0.41) GBA1THRBTSHRCA1CA2
SCHEMBL705136 0.83 THRB (0.37) THRBTSHRCA1CA2CA9
SCHEMBL1608607 0.83 THRB (0.37) THRBTSHRCA1CA2CA9
SCHEMBL11683257 0.81 THRB (0.42) THRBTSHRCA1CA2CA9
SCHEMBL703902 0.81 THRB (0.35) THRBTSHRCA1CA2CA9
SCHEMBL19809187 0.81 THRB (0.35) THRBTSHRCA1CA2CA9
SCHEMBL708500 0.81 THRB (0.35) THRBTSHRCA1CA2CA9
SCHEMBL1609565 0.81 THRB (0.35) THRBTSHRCA1CA2CA9
SCHEMBL705036 0.79
SCHEMBL19809392 0.77 CA1 (0.32) THRBTSHRCA1CA2CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed