Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAOA | P21397 | 6/20 | 0.45 |
| ▸ | MAOB | P27338 | 6/20 | 0.45 |
| ▸ | LMNA | P02545 | 3/20 | 0.44 |
| ▸ | MAPT | P10636 | 3/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.44 |
| ▸ | HPGD | P15428 | 1/20 | 0.44 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.44 |
| ▸ | XBP1 | P17861 | 1/20 | 0.44 |
| ▸ | ATM | Q13315 | 1/20 | 0.44 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.44 |
| ▸ | TSHR | P16473 | 2/20 | 0.38 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | TP53 | P04637 | 1/20 | 0.38 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.38 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.38 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.38 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL535991 | 0.84 | MAOA (0.47) | MAOAMAOBLMNAMAPTSMN1; SMN2 | |
| SCHEMBL8647606 | 0.82 | MAOA (0.48) | MAOAMAOBLMNAMAPTSMN1; SMN2 | |
| SCHEMBL24063980 | 0.81 | MAOA (0.44) | MAOAMAOBLMNAMAPTSMN1; SMN2 | |
| SCHEMBL810094 | 0.81 | MAOA (0.44) | MAOAMAOBLMNAMAPTSMN1; SMN2 | |
| SCHEMBL5031541 | 0.81 | MAOA (0.44) | MAOAMAOBLMNAMAPTSMN1; SMN2 | |
| SCHEMBL7056365 | 0.79 | MAOA (0.42) | MAOAMAOBLMNAMAPTSMN1; SMN2 | |
| SCHEMBL6441730 | 0.79 | POLB (0.47) | MAOAMAOBLMNAMAPTSMN1; SMN2 | |
| SCHEMBL5033521 | 0.79 | MAOA (0.42) | MAOAMAOBLMNAMAPTSMN1; SMN2 | |
| SCHEMBL10620167 | 0.78 | SLC6A4 (0.34) | MAOAMAOBLMNAMAPTSMN1; SMN2 | |
| SCHEMBL22136669 | 0.78 | MAOA (0.41) | MAOAMAOBLMNAMAPTSMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 130 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0787750-B1 | Poly(alkylethylene) structural isomers | BOREALIS GMBH (AT) | 2003-05-14 | — | — | EP | claimed |
| US-4680358-A | Styryl terminated macromolecular monomers of polyethers | THE B F GOODRICH COMPANY (US) | 1987-07-14 | — | — | US | claimed |
| EP-0221551-A2 | Styryl terminated macromolecular monomers of polyethers | The B.F. GOODRICH Company (US) | 1987-05-13 | — | — | EP | claimed |
| EP-4749365-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-05-27 | — | — | EP | disclosed |
| CN-122072437-A | Chemically amplified negative resist composition and resist pattern forming method | 信越化学工业株式会社 | 2026-05-22 | — | — | CN | disclosed |
| US-20260063998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-03-05 | — | — | US | disclosed |
| EP-4703798-A2 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-03-04 | — | — | EP | disclosed |
| EP-4703797-A2 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-03-04 | — | — | EP | disclosed |
| US-20260050216-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-19 | — | — | US | disclosed |
| US-20260010074-A1 | ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675352-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| US-20160299428-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-9329476-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20150198877-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-16 | — | — | US | disclosed |
| EP-0787750-B1 | Poly(alkylethylene) structural isomers | BOREALIS GMBH (AT) | 2003-05-14 | — | — | EP | disclosed |
| US-6388020-B2 | MODIFIED WITH LESS THAN 5% BY WEIGHT OF MONOFUNCTIONAL, DIFUNCTIONAL AND POLYFUNCTIONAL MONOMERS; IMPROVED MELT PROCESSABILITY; SHEETS, FILMS, PANELS, COATINGS, PIPES, HOLLOW OBJECTS AND FOAMS | BOREALIS GMBH (AT) | 2002-05-14 | — | — | US | disclosed |
| US-20010016628-A1 | Modified with less than 5% by weight of monofunctional, difunctional and polyfunctional monomers; improved melt processability; sheets, films, panels, coatings, pipes, hollow objects and foams | BOREALIS GMBH (AU) | 2001-08-23 | — | — | US | disclosed |
| EP-0787750-A2 | Poly(alkylethylene) structural isomers | PCD-Polymere Gesellschaft m.b.H. (AT) | 1997-08-06 | — | — | EP | disclosed |
| US-4680358-A | Styryl terminated macromolecular monomers of polyethers | THE B F GOODRICH COMPANY (US) | 1987-07-14 | — | — | US | disclosed |
| EP-0221551-A2 | Styryl terminated macromolecular monomers of polyethers | The B.F. GOODRICH Company (US) | 1987-05-13 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260050216-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | NAF1, CHRM1, ARCN1 | MAOA 3513/4885MAOB 3255/4885LMNA 231/4885 |
| US-20260063998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | MTX1, CHRM1, POLQ | MAOA 2735/4885MAOB 2592/4885LMNA 766/4885 |
| US-20260010074-A1 | ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS | NAF1, ASIC1, GRIN1 | MAOA 3527/4885MAOB 4207/4885LMNA 3598/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.