SCHEMBL706716

SCHEMBL706716

Br[Si](Br)(c1ccccc1)c1ccc([Si](Br)(Br)c2ccccc2)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.40
ESR2 Q92731 1/20 0.40
ALDH1A1 P00352 5/20 0.37
TDP1 Q9NUW8 3/20 0.37
CYP3A4 P08684 1/20 0.35
NR1H2 P55055 2/20 0.32
NR1H3 Q13133 2/20 0.32
TSHR P16473 5/20 0.32
MAPK1 P28482 2/20 0.32
BBOX1 O75936 1/20 0.32
EHMT2 Q96KQ7 1/20 0.32
EHMT1 Q9H9B1 1/20 0.32
TRPA1 O75762 1/20 0.32
NPC1 O15118 1/20 0.32
RAB9A P51151 1/20 0.32
MAPT P10636 2/20 0.31
NOTUM Q6P988 1/20 0.30
CA1 P00915 2/20 0.30
CA2 P00918 2/20 0.30
CA9 Q16790 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL191913 0.97 ALDH1A1 (0.39) ESR1ESR2ALDH1A1TDP1CYP3A4
SCHEMBL6046614 0.83 ALDH1A1 (0.30) ESR1ESR2ALDH1A1TDP1TSHR
SCHEMBL714180 0.80 ESR1 (0.40) ESR1ESR2ALDH1A1TDP1NR1H2
SCHEMBL3369352 0.77 CA4 (0.33) ESR1ESR2CA4
SCHEMBL703655 0.76 ALDH1A1 (0.39) ESR1ESR2ALDH1A1TDP1TSHR
SCHEMBL191172 0.76 ALDH1A1 (0.39) ESR1ESR2ALDH1A1TDP1TSHR
SCHEMBL28490364 0.74
SCHEMBL21357918 0.73 ALDH1A1 (0.37) ESR1ESR2ALDH1A1TDP1TSHR
SCHEMBL103830 0.72 ESR1 (0.43) ESR1ESR2ALDH1A1TDP1NR1H2
SCHEMBL12879524 0.72 ESR1 (0.43) ESR1ESR2ALDH1A1TDP1NR1H2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed