SCHEMBL714180

SCHEMBL714180

Br[Si](c1ccccc1)(c1ccccc1)c1ccc([Si](Br)(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.40
ESR2 Q92731 1/20 0.40
ALDH1A1 P00352 5/20 0.37
TDP1 Q9NUW8 2/20 0.37
NR1H2 P55055 2/20 0.32
NR1H3 Q13133 2/20 0.32
KDM4E B2RXH2 1/20 0.32
HPGD P15428 1/20 0.32
DPP4 P27487 2/20 0.32
TSHR P16473 2/20 0.32
MAPK1 P28482 2/20 0.32
BBOX1 O75936 1/20 0.32
EHMT2 Q96KQ7 1/20 0.32
EHMT1 Q9H9B1 1/20 0.32
TRPA1 O75762 1/20 0.32
F2 P00734 1/20 0.32
NPC1 O15118 1/20 0.32
RAB9A P51151 1/20 0.32
MAPT P10636 2/20 0.31
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703655 0.97 ALDH1A1 (0.39) ESR1ESR2ALDH1A1TDP1KDM4E
SCHEMBL706716 0.80 ESR1 (0.40) ESR1ESR2ALDH1A1TDP1NR1H2
SCHEMBL191913 0.76 ALDH1A1 (0.39) ESR1ESR2ALDH1A1TDP1HPGD
SCHEMBL191172 0.76 ALDH1A1 (0.39) ESR1ESR2ALDH1A1TDP1HPGD
SCHEMBL21357918 0.73 ALDH1A1 (0.37) ESR1ESR2ALDH1A1TDP1HPGD
SCHEMBL28166503 0.73 ALDH1A1 (0.37) ESR1ESR2ALDH1A1TDP1TSHR
SCHEMBL6931675 0.73 ALDH1A1 (0.36) ALDH1A1TDP1MAPK1
SCHEMBL126319 0.72 ESR1 (0.43) ESR1ESR2ALDH1A1TDP1NR1H2
SCHEMBL103830 0.72 ESR1 (0.43) ESR1ESR2ALDH1A1TDP1NR1H2
SCHEMBL12879524 0.72 ESR1 (0.43) ESR1ESR2ALDH1A1TDP1NR1H2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed