SCHEMBL707082

SCHEMBL707082

CCC(CC)C(=O)O[SiH2]CC[SiH2]OC(=O)C(CC)CC

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 4/20 0.38
CA1 P00915 2/20 0.38
SLC1A3 P43003 1/20 0.35
SLC1A2 P43004 1/20 0.35
SLC1A1 P43005 1/20 0.35
TSHR P16473 3/20 0.34
USP2 O75604 1/20 0.34
MAPK1 P28482 1/20 0.32
CHRM1 P11229 1/20 0.32
AKR1A1 P14550 1/20 0.32
CHRM3 P20309 1/20 0.32
HTR2A P28223 1/20 0.32
HTR2C P28335 1/20 0.32
ADRA1A P35348 1/20 0.32
HRH1 P35367 1/20 0.32
DRD3 P35462 1/20 0.32
SLC6A3 Q01959 1/20 0.32
HDAC1 Q13547 1/20 0.32
HDAC2 Q92769 1/20 0.32
TDP1 Q9NUW8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705770 0.91 CA2 (0.39) CA2CA1TSHRUSP2MAPK1
SCHEMBL706825 0.91 CA2 (0.39) CA2CA1TSHRUSP2MAPK1
SCHEMBL706666 0.86 CA2 (0.38) CA2CA1SLC1A3SLC1A2SLC1A1
SCHEMBL704138 0.84 HDAC1 (0.46) CA2CA1SLC1A3SLC1A2SLC1A1
SCHEMBL707670 0.79 CA2 (0.50) CA2CA1SLC1A3SLC1A2SLC1A1
SCHEMBL702863 0.76 HDAC1 (0.43) CA2CA1SLC1A3SLC1A2SLC1A1
SCHEMBL704952 0.76 HDAC1 (0.43) CA2CA1SLC1A3SLC1A2SLC1A1
SCHEMBL704204 0.75 ELANE (0.30)
SCHEMBL707206 0.73 HDAC1 (0.44) CA2CA1SLC1A3SLC1A2SLC1A1
SCHEMBL706149 0.73 CA2 (0.48) CA2CA1SLC1A3SLC1A2SLC1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed