SCHEMBL707248

SCHEMBL707248

CC(C)(Cc1ccccc1)[SiH](F)F

nearest known ligand 0.52

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
SLC6A2 P23975 1/20 0.52
TAAR1 Q96RJ0 1/20 0.52
CYP2D6 P10635 2/20 0.48
LMNA P02545 1/20 0.48
TRPA1 O75762 1/20 0.42
CYP1A2 P05177 3/20 0.40
CYP2C9 P11712 2/20 0.40
CYP2C19 P33261 2/20 0.40
TP53 P04637 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.38
HIF1A Q16665 1/20 0.38
CYP3A4 P08684 3/20 0.37
ALDH1A1 P00352 1/20 0.37
FDPS P14324 1/20 0.36
CALM1 P0DP23 1/20 0.36
PRMT1 Q99873 1/20 0.35
MMP8 P22894 2/20 0.35
RECQL P46063 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705908 0.77 SLC6A2 (0.52) SLC6A2TAAR1CYP2D6LMNATRPA1
SCHEMBL704105 0.77 SLC6A2 (0.52) SLC6A2TAAR1CYP2D6LMNATRPA1
SCHEMBL302655 0.74 SLC6A2 (0.48) SLC6A2TAAR1CYP2D6LMNATRPA1
SCHEMBL8002017 0.73 SLC6A2 (0.58) SLC6A2TAAR1CYP2D6LMNATRPA1
SCHEMBL7361271 0.73 SLC6A2 (0.58) SLC6A2TAAR1CYP2D6LMNATRPA1
SCHEMBL3191437 0.72 SLC6A2 (0.47) SLC6A2TAAR1CYP2D6LMNATRPA1
SCHEMBL703318 0.72 TP53 (0.48) SLC6A2TAAR1TRPA1TP53CYP3A4
SCHEMBL1572105 0.72 SLC6A2 (0.64) SLC6A2TAAR1CYP2D6LMNATRPA1
SCHEMBL347187 0.72 SLC6A2 (0.64) SLC6A2TAAR1CYP2D6LMNATRPA1
SCHEMBL705265 0.71 SLC6A2 (0.45) SLC6A2TAAR1CYP2D6LMNATRPA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed