SCHEMBL705265

SCHEMBL705265

CC(C)(Cc1ccccc1)[SiH](Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC6A2 P23975 1/20 0.45
TAAR1 Q96RJ0 1/20 0.45
LMNA P02545 1/20 0.42
CYP2D6 P10635 1/20 0.42
PPARG P37231 1/20 0.41
PPARA Q07869 1/20 0.41
NPY5R Q15761 1/20 0.39
TRPA1 O75762 1/20 0.38
MMP8 P22894 3/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
HIF1A Q16665 1/20 0.37
RIPK1 Q13546 1/20 0.37
CYP2C9 P11712 2/20 0.37
CYP2C19 P33261 2/20 0.37
CYP3A4 P08684 2/20 0.37
ALDH1A1 P00352 1/20 0.37
FDPS P14324 1/20 0.36
KMT2A Q03164 1/20 0.36
CYP1A2 P05177 2/20 0.35
RECQL P46063 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL302655 0.80 SLC6A2 (0.48) SLC6A2TAAR1LMNACYP2D6PPARG
SCHEMBL3191437 0.78 SLC6A2 (0.47) SLC6A2TAAR1LMNACYP2D6PPARG
SCHEMBL705501 0.74 CA4 (0.42) LMNACYP2D6RIPK1ALDH1A1KMT2A
SCHEMBL1357067 0.72 PPARG (0.50) SLC6A2TAAR1LMNACYP2D6PPARG
SCHEMBL704105 0.71 SLC6A2 (0.52) SLC6A2TAAR1LMNACYP2D6PPARG
SCHEMBL707248 0.71 SLC6A2 (0.52) SLC6A2TAAR1LMNACYP2D6TRPA1
SCHEMBL705908 0.71 SLC6A2 (0.52) SLC6A2TAAR1LMNACYP2D6TRPA1
SCHEMBL14461582 0.69 SLC6A2 (0.56) SLC6A2TAAR1LMNACYP2D6PPARG
SCHEMBL21112841 0.69 CA4 (0.42) RIPK1ALDH1A1
SCHEMBL19927127 0.69 LTA4H (0.38) CYP2D6RIPK1ALDH1A1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed