SCHEMBL707427

SCHEMBL707427

CC(C)(C)O[SiH](OC(C)(C)C)C(C)(C)c1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.44
ALDH1A1 P00352 3/20 0.41
ALOX15 P16050 1/20 0.41
CYP2C19 P33261 1/20 0.38
HIF1A Q16665 1/20 0.38
TAAR1 Q96RJ0 1/20 0.37
ESR1 P03372 2/20 0.35
ESR2 Q92731 2/20 0.35
CYP3A4 P08684 1/20 0.35
KCNN4 O15554 4/20 0.34
MAPT P10636 1/20 0.34
KMT2A Q03164 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
TSHR P16473 2/20 0.33
CYP2B6 P20813 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3107619 0.79 MAPK1 (0.46) MAPK1ALDH1A1ALOX15CYP2C19HIF1A
SCHEMBL22730218 0.70 MAPK1 (0.46) MAPK1ALDH1A1ALOX15CYP2C19HIF1A
SCHEMBL2532155 0.70 MAPK1 (0.46) MAPK1ALDH1A1ALOX15CYP2C19HIF1A
SCHEMBL10692727 0.69 MAPK1 (0.44) MAPK1ALDH1A1ALOX15CYP2C19HIF1A
SCHEMBL3191437 0.68 SLC6A2 (0.47) MAPK1ALDH1A1CYP2C19HIF1ATAAR1
SCHEMBL22730227 0.67 MAPK1 (0.42) MAPK1ALDH1A1ALOX15CYP2C19HIF1A
SCHEMBL272625 0.67 MAPK1 (0.37) MAPK1ALDH1A1ALOX15TAAR1KCNN4
SCHEMBL9390382 0.67 MAPK1 (0.43) MAPK1ALDH1A1ALOX15CYP2C19HIF1A
SCHEMBL22319094 0.65 MAPK1 (0.41) MAPK1ALDH1A1ALOX15CYP2C19HIF1A
SCHEMBL704260 0.65 MAPK1 (0.36) MAPK1ALDH1A1ALOX15TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed