SCHEMBL708106

SCHEMBL708106

Br[Si](Br)(CCCC[Si](Br)(Br)c1ccccc1)c1ccccc1

nearest known ligand 0.33

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.33
MAPT P10636 2/20 0.33
TRPA1 O75762 1/20 0.32
TSHR P16473 1/20 0.32
TDP1 Q9NUW8 1/20 0.30
ESR1 P03372 1/20 0.30
ESR2 Q92731 1/20 0.30
KCNH2 Q12809 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705811 0.95 ALDH1A1 (0.33) ALDH1A1MAPTTRPA1TSHRTDP1
SCHEMBL706954 0.89 ALDH1A1 (0.35) ALDH1A1MAPTTRPA1TSHRTDP1
SCHEMBL18108369 0.87 KCNH2 (0.42) ALDH1A1KCNH2
SCHEMBL18108181 0.87 KCNH2 (0.42) ALDH1A1KCNH2
SCHEMBL705289 0.86 TSHR (0.36) TSHRTDP1
SCHEMBL708300 0.80 TP53 (0.35) ALDH1A1MAPTTSHRTDP1ESR1
SCHEMBL705023 0.79 ALDH1A1 (0.32) ALDH1A1MAPTTRPA1TSHRTDP1
SCHEMBL704377 0.78 ALDH1A1 (0.35) ALDH1A1MAPTTRPA1TSHRTDP1
SCHEMBL707200 0.74 ALDH1A1 (0.33) ALDH1A1MAPTESR1ESR2KCNH2
SCHEMBL707662 0.74 ALDH1A1 (0.32) ALDH1A1MAPTTRPA1TSHRTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed