SCHEMBL708600

SCHEMBL708600

CC(C)[Si](Br)(Br)C(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705110 0.74
SCHEMBL15526506 0.70
SCHEMBL7023995 0.70
SCHEMBL705161 0.70
SCHEMBL31163019 0.70
SCHEMBL8423462 0.70
SCHEMBL11240395 0.67 ALDH1A1 (0.40)
SCHEMBL8423490 0.67 ALDH1A1 (0.31)
SCHEMBL9357118 0.67
SCHEMBL4352 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250060673-A1 DEVELOPMENT STRATEGY FOR HIGH-ABSORBING METAL-CONTAINING PHOTORESISTS LAM RES CORP (US) 2025-02-20 US claimed
WO-2024211411-A1 PERFORMING ATOMIC LAYER ETCHING USING A SILANE-BASED CHEMISTRY LAM RESEARCH CORPORATION (US) 2024-10-10 WO claimed
WO-2023115023-A1 DEVELOPMENT STRATEGY FOR HIGH-ABSORBING METAL-CONTAINING PHOTORESISTS LAM RESEARCH CORPORATION (US) 2023-06-22 WO claimed
US-20250376758-A1 SELECTIVE DEPOSITION OF METAL-CONTAINING MATERIAL ASM IP HOLDING BV (NL) 2025-12-11 US disclosed
US-20250060673-A1 DEVELOPMENT STRATEGY FOR HIGH-ABSORBING METAL-CONTAINING PHOTORESISTS LAM RES CORP (US) 2025-02-20 US disclosed
WO-2024211411-A1 PERFORMING ATOMIC LAYER ETCHING USING A SILANE-BASED CHEMISTRY LAM RESEARCH CORPORATION (US) 2024-10-10 WO disclosed
CN-108375878-B Polymerizable composition, method for producing cured film, and cured film 东京应化工业株式会社 2023-12-08 CN disclosed
US-11718717-B2 Resin composition, method for producing resin composition, film formation method, and cured product TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-08 US disclosed
WO-2023115023-A1 DEVELOPMENT STRATEGY FOR HIGH-ABSORBING METAL-CONTAINING PHOTORESISTS LAM RESEARCH CORPORATION (US) 2023-06-22 WO disclosed
CN-114507329-A PH response controllable degradable polyurethane and preparation method thereof 中国人民大学 2022-05-17 CN disclosed
CN-108884228-B Process for producing organic polysilane 日本曹达株式会社 2021-06-29 CN disclosed
EP-1705206-A1 METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM JSR Corporation (JP) 2006-09-27 EP disclosed
EP-1701963-A1 HALOALUMINOXANE COMPOSITIONS, THEIR PREPARATION, AND THEIR USE IN CATALYSIS ALBEMARLE CORPORATION (US) 2006-09-20 EP disclosed
WO-2005066191-A1 HALOALUMINOXANE COMPOSITIONS, THEIR PREPARATION, AND THEIR USE IN CATALYSIS ALBEMARLE CORPORATION (US) 2005-07-21 WO disclosed
US-20050143254-A1 Haloaluminoxane compositions, their preparation, and their use in catalysis W. R. GRACE & CO.-CONN. 2005-06-30 US disclosed
US-20050118742-A1 Method for reducing the adhesive properties of MEMS and anti-adhesion-coated device ROBERT BOSCH GMBH (DE) 2005-06-02 US disclosed
EP-1110965-A2 Process for preparing 1,3-dihalo-1,1,3,3-tetra(organyl)disiloxanes Wacker-Chemie GmbH (DE) 2001-06-27 EP disclosed
US-5997637-A Method of producing a semiconducting material NIPPON OIL CO., LTD. (JP) 1999-12-07 US disclosed
EP-0632086-B1 A method of producing a semiconducting material NIPPON OIL CO LTD (JP) 1999-10-06 EP disclosed
EP-0632086-A2 A method of producing a semiconducting material NIPPON OIL CO., LTD. (JP) 1995-01-04 EP disclosed