SCHEMBL7104263

SCHEMBL7104263

CCC=C(OC)C(N)=O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL554691 1.00
SCHEMBL1556036 0.82 GRIK1 (0.35)
SCHEMBL7048132 0.81
SCHEMBL1099875 0.80 TSHR (0.33)
SCHEMBL27656796 0.79 ALOX15 (0.48)
SCHEMBL1135174 0.79 ALOX15 (0.48)
SCHEMBL6048387 0.79 GRIK1 (0.39)
SCHEMBL27637941 0.79 ALOX15 (0.33)
SCHEMBL800066 0.78
SCHEMBL164680 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-102140181-B Polyvinylidene fluoride (PVDF) hydrophilic modified membrane and preparation method thereof UNIV TIANJIN POLYTECHNIC 2013-04-17 CN claimed
CN-102140181-A Polyvinylidene fluoride (PVDF) hydrophilic modified membrane and preparation method thereof UNIV TIANJIN POLYTECHNIC 2011-08-03 CN claimed
CN-104698774-B semiconductor device process filter and method 台湾积体电路制造股份有限公司 2019-10-25 CN disclosed
CN-109782553-A Photoresist developer 台湾积体电路制造股份有限公司 2019-05-21 CN disclosed
CN-109782540-A The forming method of photoetching agent pattern 台湾积体电路制造股份有限公司 2019-05-21 CN disclosed
CN-105047540-B Anti-reflecting layer and method 台湾积体电路制造股份有限公司 2018-05-25 CN disclosed
CN-104752171-B gap filling material and method 台湾积体电路制造股份有限公司 2018-02-27 CN disclosed
CN-105093826-A Photoresist and Method TAIWAN SEMICONDUCTOR MFG 2015-11-25 CN disclosed
CN-105047540-A Anti-Reflective Layer and Method TAIWAN SEMICONDUCTOR MFG 2015-11-11 CN disclosed
CN-104752171-A Gap Filling Materials and Methods TAIWAN SEMICONDUCTOR MFG 2015-07-01 CN disclosed
CN-104689619-A Filter with sealing treatment TAIWAN SEMICONDUCTOR MFG CO LTD 2015-06-10 CN disclosed
CN-102140181-B Polyvinylidene fluoride (PVDF) hydrophilic modified membrane and preparation method thereof UNIV TIANJIN POLYTECHNIC 2013-04-17 CN disclosed
CN-102140181-A Polyvinylidene fluoride (PVDF) hydrophilic modified membrane and preparation method thereof UNIV TIANJIN POLYTECHNIC 2011-08-03 CN disclosed
CN-102112191-A Graft copolymers for ion exchange chromatography MERCK PATENT GMBH 2011-06-29 CN disclosed
CN-1938224-B Method for treating surface of base, surface-treated base, material and instrument for medical use TOYO ADVANCED TECH CO 2011-03-30 CN disclosed
CN-1133221-C Nonaqueous secondary battery FUJI PHOTO FILM CO LTD (JP) 2003-12-31 CN disclosed
US-20030232193-A1 Dry film resist and printed circuit board producing method FUJI PHOTO FILM CO., LTD. (JP) 2003-12-18 US disclosed
CN-1189247-A Nonaqueous secondary battery FUJI PHOTO FILM CO LTD (JP) 1998-07-29 CN disclosed
CN-1028915-C Silver halide color photographic material FUJI PHOTO FILM CO LTD (JP) 1995-06-14 CN disclosed
CN-1055824-A Silver-halide color photoelement FUJI PHOTO FILM CO LTD (JP) 1991-10-30 CN disclosed