SCHEMBL714015

SCHEMBL714015

[SiH3]Oc1ccccc1-c1ccccc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 2/20 0.48
TP53 P04637 1/20 0.48
RAB9A P51151 1/20 0.48
NCOA1 Q15788 1/20 0.48
NCOA3 Q9Y6Q9 1/20 0.48
HRH1 P35367 1/20 0.46
HTR7 P34969 1/20 0.46
TDP1 Q9NUW8 1/20 0.44
L3MBTL1 Q9Y468 1/20 0.44
ADRB2 P07550 4/20 0.43
ALDH1A1 P00352 4/20 0.42
HSD17B10 Q99714 2/20 0.42
HPGD P15428 1/20 0.42
BCL2L1 Q07817 1/20 0.42
CYP2A6 P11509 1/20 0.42
ADRB1 P08588 2/20 0.41
RXRA P19793 1/20 0.41
RXRB P28702 1/20 0.41
RXRG P48443 1/20 0.41
LMNA P02545 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18784858 0.82 MAPK1 (0.39) MAPK1TP53RAB9ANCOA1NCOA3
SCHEMBL112422 0.79 NCOA1 (0.63) MAPK1TP53RAB9ANCOA1NCOA3
SCHEMBL10756496 0.77 NCOA1 (0.61) MAPK1TP53RAB9ANCOA1NCOA3
Hydrogen Sulfide SCHEMBL27922694 0.77 NCOA1 (0.61) MAPK1TP53RAB9ANCOA1NCOA3
SCHEMBL28436320 0.77 NCOA1 (0.61) MAPK1TP53RAB9ANCOA1NCOA3
SCHEMBL6321993 0.77 NCOA1 (0.61) MAPK1TP53RAB9ANCOA1NCOA3
SCHEMBL28431579 0.77 NCOA1 (0.61) MAPK1TP53RAB9ANCOA1NCOA3
SCHEMBL5970714 0.75 MAPK1 (0.48) MAPK1TP53RAB9ANCOA1NCOA3
SCHEMBL983135 0.75 MAPK1 (0.48) MAPK1TP53RAB9ANCOA1NCOA3
SCHEMBL4907664 0.75 TDP1 (0.48) MAPK1TP53RAB9ANCOA1NCOA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12480201-B2 Barrier film, laminate, and packaging product DAI NIPPON PRINTING CO., LTD. (JP) 2025-11-25 US disclosed
CN-113906153-B Barrier film, laminate and packaged product 大日本印刷株式会社 2024-05-28 CN disclosed
US-11655087-B2 Barrier resin film, barrier laminate and packaging material using barrier laminate DAI NIPPON PRINTING CO., LTD. (JP) 2023-05-23 US disclosed
CN-111886131-B Barrier resin film, barrier laminate, and packaging material using barrier laminate 大日本印刷株式会社 2022-12-06 CN disclosed
US-20220162740-A1 BARRIER FILM, LAMINATE, AND PACKAGING PRODUCT DAI NIPPON PRINTING CO., LTD. (JP) 2022-05-26 US disclosed
EP-3984738-A1 BARRIER FILM, LAMINATE, AND PACKAGING PRODUCT Dai Nippon Printing Co., Ltd. (JP) 2022-04-20 EP disclosed
CN-113906153-A Barrier film, laminate and packaging product 大日本印刷株式会社 2022-01-07 CN disclosed
EP-3769956-A1 BARRIER RESIN FILM, BARRIER LAMINATE AND PACKAGING MATERIAL USING BARRIER LAMINATE Dai Nippon Printing Co., Ltd. (JP) 2021-01-27 EP disclosed
US-20210002050-A1 BARRIER RESIN FILM, BARRIER LAMINATE AND PACKAGING MATERIAL USING BARRIER LAMINATE DAI NIPPON PRINTING CO., LTD. (JP) 2021-01-07 US disclosed
WO-2020250969-A1 BARRIER FILM, LAMINATE, AND PACKAGING PRODUCT 大日本印刷株式会社 2020-12-17 WO disclosed
CN-103003269-A Substituted heterocyclyl benzyl pyrazoles, and use thereof BAYER IP GMBH 2013-03-27 CN disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-1312148-C Isochroman compounds for treatment of CNS disorders LILLY CO ELI (US) 2007-04-25 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1620447-A Isochroman compounds for treatment of cns disorders LILLY CO ELI (US) 2005-05-25 CN disclosed
EP-0542243-B1 Thermal disproportionation of organooxysilanes DOW CORNING (US) 1997-06-18 EP disclosed
EP-0542243-A1 Thermal disproportionation of organooxysilanes DOW CORNING CORPORATION (US) 1993-05-19 EP disclosed
US-5126472-A Phenyldialkoxysilanes to diphenyldialkoxysilanes and cycloalkyldialkoxysilanes to dicyclodialkoxysilanes DOW CORNING CORPORATION (US) 1992-06-30 US disclosed