SCHEMBL7143398

SCHEMBL7143398

NCC(N)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 2/20 0.43
LTA4H P09960 2/20 0.38
TSHR P16473 1/20 0.38
PLA2G2A P14555 1/20 0.38
AOC3 Q16853 1/20 0.38
KCNA3 P22001 1/20 0.37
HRH1 P35367 1/20 0.35
KIF11 P52732 2/20 0.35
KCNN4 O15554 1/20 0.35
LOXL2 Q9Y4K0 1/20 0.35
CA4 P22748 1/20 0.35
MAOA P21397 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9719486 0.82 TAAR1 (0.45) TAAR1LTA4HTSHRPLA2G2AAOC3
SCHEMBL31696774 0.80 CA1 (0.36) TAAR1TSHR
SCHEMBL5675865 0.79 TAAR1 (0.46) TAAR1LTA4HTSHRPLA2G2AAOC3
SCHEMBL692290 0.77 TAAR1 (0.40) TAAR1LTA4HTSHRPLA2G2AAOC3
Hydrochloric Acid SCHEMBL2904277 0.76 TAAR1 (0.39) TAAR1LTA4HTSHRPLA2G2AAOC3
SCHEMBL9719483 0.71 TAAR1 (0.39) TAAR1KIF11KCNN4
Sulfuric Acid SCHEMBL17976592 0.70 CA1 (0.38) TAAR1TSHRAOC3
SCHEMBL24482436 0.70 LTA4H (0.41) TAAR1LTA4HTSHRPLA2G2AKCNA3
SCHEMBL11713703 0.70 CA4 (0.43) TAAR1LTA4HTSHRKCNA3KCNN4
SCHEMBL11081791 0.70 MAOA (0.42) TAAR1LTA4HTSHRKCNA3KCNN4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115725018-B Thermosetting shape memory material and preparation method thereof 哈尔滨工业大学 2023-07-21 CN claimed
CN-116178184-A Preparation method of 2,2' -diaminodiphenoxyethane 淄博鸿润新材料有限公司 2023-05-30 CN claimed
CN-115725018-A Thermosetting shape memory material and preparation method thereof 哈尔滨工业大学 2023-03-03 CN claimed
CN-220899568-U Crystallization device of 2, 2-diamino diphenoxyethane 淄博鸿润新材料有限公司 2024-05-07 CN disclosed
CN-220899568-U Crystallization device of 2, 2-diamino diphenoxyethane 淄博鸿润新材料有限公司 2024-05-07 CN disclosed
CN-115725018-B Thermosetting shape memory material and preparation method thereof 哈尔滨工业大学 2023-07-21 CN disclosed
CN-116178184-A Preparation method of 2,2' -diaminodiphenoxyethane 淄博鸿润新材料有限公司 2023-05-30 CN disclosed
CN-116178184-A Preparation method of 2,2' -diaminodiphenoxyethane 淄博鸿润新材料有限公司 2023-05-30 CN disclosed
CN-115725018-A Thermosetting shape memory material and preparation method thereof 哈尔滨工业大学 2023-03-03 CN disclosed
EP-1342395-A2 MULTI-LAYER CIRCUITS AND METHODS OF MANUFACTURE THEREOF WORLD PROPERTIES, INC, an Illinois Corporation (US) 2003-09-10 EP disclosed
WO-2002049405-A2 MULTI-LAYER CIRCUITS AND METHODS OF MANUFACTURE THEREOF WORLD PROPERTIES, INC. (US) 2002-06-20 WO disclosed