⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL560524 | 0.77 | — | — | |
| SCHEMBL9850113 | 0.69 | — | — | |
| SCHEMBL7151671 | 0.69 | — | — | |
| SCHEMBL560523 | 0.69 | — | — | |
| SCHEMBL15661025 | 0.67 | ALDH1A1 (0.32) | — | |
| SCHEMBL7149053 | 0.65 | — | — | |
| SCHEMBL19927087 | 0.65 | — | — | |
| SCHEMBL21112850 | 0.65 | — | — | |
| SCHEMBL2104558 | 0.64 | — | — | |
| SCHEMBL5005527 | 0.64 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1039521-B1 | Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidising agent in the presence of one or more reaction retardants | LSI LOGIC CORP (US) | 2014-04-23 | — | — | EP | claimed |
| US-6524974-B1 | FORMATION OF IMPROVED LOW DIELECTRIC CONSTANT CARBON-CONTAINING SILICON OXIDE DIELECTRIC MATERIAL BY REACTION OF CARBON-CONTAINING SILANE WITH OXIDIZING AGENT IN THE PRESENCE OF ONE OR MORE REACTION RETARDANTS | LSI LOGIC CORPORATION | 2003-02-25 | — | — | US | claimed |
| EP-1039521-A2 | Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidising agent in the presence of one or more reaction retardants | LSI LOGIC CORPORATION (US) | 2000-09-27 | — | — | EP | claimed |
| EP-1039521-B1 | Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidising agent in the presence of one or more reaction retardants | LSI LOGIC CORP (US) | 2014-04-23 | — | — | EP | disclosed |
| US-6524974-B1 | FORMATION OF IMPROVED LOW DIELECTRIC CONSTANT CARBON-CONTAINING SILICON OXIDE DIELECTRIC MATERIAL BY REACTION OF CARBON-CONTAINING SILANE WITH OXIDIZING AGENT IN THE PRESENCE OF ONE OR MORE REACTION RETARDANTS | LSI LOGIC CORPORATION | 2003-02-25 | — | — | US | disclosed |
| EP-1039521-A2 | Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidising agent in the presence of one or more reaction retardants | LSI LOGIC CORPORATION (US) | 2000-09-27 | — | — | EP | disclosed |
| WO-1998038168-A1 | ISOQUINOLINONE DERIVATIVES, PROCESS FOR PREPARING THE SAME, AND THEIR USE AS PHOSPHODIESTERASE INHIBITORS | TANABE SEIYAKU CO., LTD. (JP) | 1998-09-03 | — | — | WO | disclosed |
| EP-0269080-B1 | SUBSTRATES WITH STERICALLY-PROTECTED, STABLE, COVALENTLY-BONDED ORGANO-SILANE FILMS | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 1991-02-27 | — | — | EP | disclosed |
| US-4847159-A | Substrates coated with organo-silanes that are sterically-protected | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 1989-07-11 | — | — | US | disclosed |
| EP-0269080-A1 | Substrates with sterically-protected, stable, covalently-bonded organo-silane films | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 1988-06-01 | — | — | EP | disclosed |
| US-4705725-A | Substrates with sterically-protected, stable, covalently-bonded organo-silane films | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 1987-11-10 | — | — | US | disclosed |