⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29356972 | 0.71 | — | — | |
| SCHEMBL30828689 | 0.71 | — | — | |
| SCHEMBL2401691 | 0.71 | — | — | |
| SCHEMBL5877574 | 0.50 | — | — | |
| Potassium Ion SCHEMBL11651980 | 0.50 | — | — | |
| Fluoride Ion SCHEMBL309897 | 0.50 | — | — | |
| Water SCHEMBL284820 | 0.50 | — | — | |
| SCHEMBL1902881 | 0.50 | — | — | |
| SCHEMBL4843471 | 0.50 | — | — | |
| SCHEMBL3292029 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11777016-B2 | Method of forming backside power rails | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-03 | — | — | US | claimed |
| US-20220336641-A1 | Method of Forming Backside Power Rails | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-10-20 | — | — | US | claimed |
| US-12581717-B2 | Frontside and backside epi contact | INTEL CORPORATION (US) | 2026-03-17 | — | — | US | disclosed |
| US-20260068214-A1 | Integrated Assemblies having Transistors Configured for High-Voltage Applications, and Methods of Forming Integrated Assemblies | MICRON TECHNOLOGY, INC. (US) | 2026-03-05 | — | — | US | disclosed |
| US-12490452-B2 | Integrated assemblies having transistors configured for high-voltage applications, and methods of forming integrated assemblies | MICRON TECHNOLOGY, INC. (US) | 2025-12-02 | — | — | US | disclosed |
| US-20250351478-A1 | HYBRID NANOSTRUCTURE SCHEME AND METHODS FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-12451399-B2 | Integrated thermal solution to enable operation of embedded processors in sub-zero temperatures | INTEL CORPORATION (US) | 2025-10-21 | — | — | US | disclosed |
| US-20250098237-A1 | HYBRID NANOSTRUCTURE SCHEME AND METHODS FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-03-20 | — | — | US | disclosed |
| CN-119300409-A | Semiconductor structure, forming method thereof and transistor | 台湾积体电路制造股份有限公司 | 2025-01-10 | — | — | CN | disclosed |
| US-20240379807-A1 | METAL SOURCE/DRAIN FEATURES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-11-14 | — | — | US | disclosed |
| CN-113054026-B | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2024-08-23 | — | — | CN | disclosed |
| US-20210305393-A1 | Metal Source/Drain Features | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-09-30 | — | — | US | disclosed |
| US-11133223-B2 | Selective epitaxy | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-09-28 | — | — | US | disclosed |
| CN-113054026-A | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-06-29 | — | — | CN | disclosed |
| US-20210020522-A1 | Selective Epitaxy | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-01-21 | — | — | US | disclosed |
| CN-112242356-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2021-01-19 | — | — | CN | disclosed |
| US-8395215-B2 | Germanium field effect transistors and fabrication thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-03-12 | — | — | US | disclosed |
| US-20120112282-A1 | Germanium Field Effect Transistors and Fabrication Thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2012-05-10 | — | — | US | disclosed |
| US-8124513-B2 | Germanium field effect transistors and fabrication thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2012-02-28 | — | — | US | disclosed |
| US-20100237444-A1 | Germanium Field Effect Transistors and Fabrication Thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2010-09-23 | — | — | US | disclosed |