SCHEMBL716379

SCHEMBL716379

O=C(OF)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)F

nearest known ligand 0.39

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.39
KDM4E B2RXH2 1/20 0.39
TDP1 Q9NUW8 1/20 0.39
USP2 O75604 1/20 0.36
MAPT P10636 1/20 0.36
L3MBTL1 Q9Y468 2/20 0.35
HTT P42858 1/20 0.35
GAA P10253 1/20 0.33
THRB P10828 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL713217 1.00 TSHR (0.39) TSHRKDM4ETDP1USP2MAPT
SCHEMBL715364 1.00 TSHR (0.39) TSHRKDM4ETDP1USP2MAPT
SCHEMBL712408 1.00 TSHR (0.39) TSHRKDM4ETDP1USP2MAPT
SCHEMBL714357 1.00 TSHR (0.39) TSHRKDM4ETDP1USP2MAPT
SCHEMBL713038 1.00 TSHR (0.39) TSHRKDM4ETDP1USP2MAPT
SCHEMBL403954 1.00 TSHR (0.39) TSHRKDM4ETDP1USP2MAPT
SCHEMBL720226 1.00 TSHR (0.39) TSHRKDM4ETDP1USP2MAPT
SCHEMBL715943 1.00 TSHR (0.39) TSHRKDM4ETDP1USP2MAPT
Water SCHEMBL15939211 0.98 TSHR (0.38) TSHRKDM4ETDP1USP2MAPT
Ammonia Solution, Strong SCHEMBL6997853 0.98 TSHR (0.38) TSHRKDM4ETDP1USP2MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240150204-A1 BIAS ENHANCED ELECTROLYTIC PHOTOCATALYSIS (BEEP) CLEANING SYSTEM Waterdrape, LLC 2024-05-09 US disclosed
US-11919786-B2 Bias enhanced electrolytic photocatalysis (BEEP) cleaning system Waterdrape, LLC (US) 2024-03-05 US disclosed
US-20230113314-A1 BIAS ENHANCED ELECTROLYTIC PHOTOCATALYSIS (BEEP) CLEANING SYSTEM Waterdrape, LLC 2023-04-13 US disclosed
WO-2022265913-A1 COPOLYMERS AND ELECTROCHEMICAL SYSTEMS AND METHODS FOR THE REMEDIATION OF ORGANIC POLLUTANTS THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS (US) 2022-12-22 WO disclosed
US-11123950-B2 Artificial leather sheet and method for manufacturing thereof Kolon Giotech, Inc. (KR) 2021-09-21 US disclosed
US-20190255806-A1 ARTIFICIAL LEATHER SHEET AND METHOD FOR MANUFACTURING THEREOF KOLON INDUSTRIES, INC. (KR) 2019-08-22 US disclosed
US-9447314-B2 Treatment fluids containing a perfluorinated chelating agent and methods for use thereof HALLIBURTON ENERGY SERVICES, INC. (US) 2016-09-20 US disclosed
US-20160237339-A1 TREATMENT FLUIDS CONTAINING A PERFLUORINATED CHELATING AGENT AND METHODS FOR USE THEREOF HALLIBURTON ENERGY SERVICES, INC. (US) 2016-08-18 US disclosed
WO-2015053753-A1 TREATMENT FLUIDS CONTAINING A PERFLUORINATED CHELATING AGENT AND METHODS FOR USE THEREOF HALLIBURTON ENERGY SERVICES, INC. (US) 2015-04-16 WO disclosed
US-8357765-B2 Process for producing catalyst component for addition polymerization SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-01-22 US disclosed
US-7690301-B2 including a cationically polymerizable compound, a compound that generates acid by irradiation with a radiation ray, and a basic compound that becomes less basic by irradiation with a radiation ray; curable with high sensitivity to a radiation ray FUJIFILM CORPORATION (JP) 2010-04-06 US disclosed
US-7521168-B2 Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. FUJIFILM CORPORATION (JP) 2009-04-21 US disclosed
US-20090035692-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7214467-B2 Photosensitive resin composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7202015-B2 Positive photoresist composition and pattern making method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-04-10 US disclosed
US-7198880-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-04-03 US disclosed
US-7163776-B2 Positive-working resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-01-16 US disclosed
US-7160666-B2 Photosensitive resin composition FUJI PHOTO FILM CO., LTD. (JP) 2007-01-09 US disclosed
US-7157206-B2 Resin containing an acid-decomposable group such as bis(trifluoromethyl)methanol group, to generate alkali-soluble group, and acid generators selected from fluorine-substituted or non-fluorine substituted aromatic or aliphatic carboxylic acid generators or sulfonic acid generators; microlithography FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 US disclosed