SCHEMBL7164191

SCHEMBL7164191

O=C1c2ccccc2C(=O)N1S(=O)(=O)OC(F)(F)F

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CASP1 P29466 1/20 0.42
KMT2A Q03164 6/20 0.40
MEN1 O00255 4/20 0.40
KDM4E B2RXH2 5/20 0.40
MAPT P10636 5/20 0.40
HPGD P15428 3/20 0.40
ALDH1A1 P00352 3/20 0.40
CASP3 P42574 1/20 0.37
VDR P11473 2/20 0.37
CA12 O43570 1/20 0.35
CA1 P00915 1/20 0.35
CA2 P00918 1/20 0.35
CA9 Q16790 1/20 0.35
SCN2A Q99250 1/20 0.35
CDC25B P30305 1/20 0.34
POLB P06746 2/20 0.34
GAA P10253 1/20 0.34
NPSR1 Q6W5P4 2/20 0.34
F2 P00734 2/20 0.34
LMNA P02545 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27861906 0.85 ERCC1 (0.46) KMT2AMEN1KDM4EMAPTHPGD
SCHEMBL3877590 0.75 KDM4E (0.53) CASP1KMT2AMEN1KDM4EMAPT
SCHEMBL8423045 0.75 CASP1 (0.42) CASP1KMT2AMEN1KDM4EMAPT
SCHEMBL30643544 0.75 CASP1 (0.42) CASP1KMT2AMEN1KDM4EMAPT
SCHEMBL27977897 0.74 MEN1 (0.40) KMT2AMEN1KDM4EMAPTALDH1A1
SCHEMBL21034093 0.71 CASP3 (0.45) CASP1KMT2AMEN1KDM4EMAPT
SCHEMBL31229117 0.71 CASP3 (0.48) KMT2AMEN1KDM4EMAPTHPGD
SCHEMBL8452187 0.71 CASP3 (0.48) KMT2AMEN1KDM4EMAPTHPGD
SCHEMBL11871269 0.70 KMT2A (0.47) KMT2AMEN1KDM4EMAPTHPGD
SCHEMBL22954047 0.68 GAA (0.47) CASP1KMT2AMEN1KDM4EMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6566036-B2 Comprising polyhydroxystyrene protected by 1-ethoxyethanol, photosensitive acid generator, solvent and polystyrene filler; dimensional and shape control of semiconductors; responsive to design rule of <0.15mu m; miniaturization NEC ELECTRONICS CORPORATION (JP) 2003-05-20 US claimed
US-20010009749-A1 Chemically amplified resist NEC CORPORATION 2001-07-26 US claimed
US-6566036-B2 Comprising polyhydroxystyrene protected by 1-ethoxyethanol, photosensitive acid generator, solvent and polystyrene filler; dimensional and shape control of semiconductors; responsive to design rule of <0.15mu m; miniaturization NEC ELECTRONICS CORPORATION (JP) 2003-05-20 US disclosed
US-20010009749-A1 Chemically amplified resist NEC CORPORATION 2001-07-26 US disclosed
US-5633112-A Photosensitive resin composition containing a carboxylic acid polymer, photoacid generator and secondary or tertiary aliphatic amine HITACHI, LTD. (JP) 1997-05-27 US disclosed