SCHEMBL7197459

SCHEMBL7197459

CC(C)(C)OC(=O)COc1ccccc1C=O

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTGDR2 Q9Y5Y4 1/20 0.62
ALDH1A1 P00352 7/20 0.54
HPGD P15428 3/20 0.54
SMN1; SMN2 Q16637 3/20 0.54
HTT P42858 1/20 0.54
MAPT P10636 5/20 0.49
KMT2A Q03164 3/20 0.49
MEN1 O00255 2/20 0.49
KDM4E B2RXH2 1/20 0.49
USP2 O75604 1/20 0.48
PLA2G1B P04054 1/20 0.47
ATG4B Q9Y4P1 1/20 0.47
NPC1 O15118 2/20 0.46
RAB9A P51151 2/20 0.46
NFKB1 P19838 1/20 0.46
NFKB2 Q00653 1/20 0.46
RELA Q04206 1/20 0.46
L3MBTL1 Q9Y468 1/20 0.44
LMNA P02545 3/20 0.44
NPSR1 Q6W5P4 2/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7109286 0.87 DDB1 (0.51) PTGDR2ALDH1A1HPGDSMN1; SMN2HTT
SCHEMBL6324452 0.87 PTGDR2 (0.48) PTGDR2ALDH1A1HPGDSMN1; SMN2HTT
SCHEMBL1397119 0.87 USP2 (0.47) PTGDR2ALDH1A1HPGDSMN1; SMN2HTT
SCHEMBL22656552 0.85 POLB (0.50) ALDH1A1HPGDSMN1; SMN2HTTMAPT
SCHEMBL1948329 0.83 PTGDR2 (0.68) PTGDR2ALDH1A1HPGDSMN1; SMN2HTT
SCHEMBL20710996 0.81 MAPT (0.47) PTGDR2ALDH1A1HPGDMAPTKMT2A
SCHEMBL6599735 0.81 ALDH1A1 (0.49) PTGDR2ALDH1A1HPGDMAPTKMT2A
SCHEMBL6599376 0.81 ALDH1A1 (0.49) PTGDR2ALDH1A1HPGDMAPTKMT2A
SCHEMBL6510495 0.81 USP2 (0.42) PTGDR2ALDH1A1HPGDSMN1; SMN2MAPT
SCHEMBL25470745 0.80 PTGDR2 (0.51) PTGDR2ALDH1A1HPGDSMN1; SMN2MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109388021-B Composition for forming organic film 信越化学工业株式会社 2022-09-27 CN disclosed
CN-109388027-B Substrate with resist multilayer film and pattern forming method 信越化学工业株式会社 2021-12-03 CN disclosed
US-6603029-B1 Partially protected trisphenols in which only specifically selected one or two of the three hydroxyl groups are protected with a protecting agent and which are suitable for use as a dissolution inhibitor in chemically amplified photoresists HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2003-08-05 US disclosed