Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 2/20 | 0.44 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.44 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.44 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.44 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.44 |
| ▸ | GALR3 | O60755 | 1/20 | 0.42 |
| ▸ | MAPT | P10636 | 1/20 | 0.42 |
| ▸ | BLM | P54132 | 1/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | HPGD | P15428 | 1/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.32 |
| ▸ | TRPV1 | Q8NER1 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ethylene Glycol SCHEMBL28792664 | 0.92 | TSHR (0.47) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| Propylene Glycol Diacetate SCHEMBL107287 | 0.91 | TDP1 (0.42) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| Propylene Glycol Diacetate SCHEMBL2466143 | 0.91 | TDP1 (0.42) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL27460307 | 0.90 | TSHR (0.42) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL28300930 | 0.90 | TSHR (0.48) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL23294918 | 0.89 | TSHR (0.52) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL3255632 | 0.89 | — | — | |
| SCHEMBL15667 | 0.89 | — | — | |
| SCHEMBL3249555 | 0.89 | — | — | |
| Propylene Glycol Diacetate SCHEMBL107443 | 0.89 | TDP1 (0.41) | TSHRCHRM2CHRM4CHRM1TBXA2R |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114660896-B | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2024-06-11 | — | — | CN | disclosed |
| US-12001138-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-04 | — | — | US | disclosed |
| US-11934100-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-19 | — | — | US | disclosed |
| EP-3680275-B1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-03-06 | — | — | EP | disclosed |
| EP-3796086-B1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-02-28 | — | — | EP | disclosed |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| CN-117083570-A | Composition for forming silicon-containing resist underlayer film | 日产化学株式会社 | 2023-11-17 | — | — | CN | disclosed |
| CN-117063129-A | Composition for forming silicon-containing underlayer film for directional self-assembly | 日产化学株式会社 | 2023-11-14 | — | — | CN | disclosed |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| EP-3680275-A1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2020-07-15 | — | — | EP | disclosed |
| US-20200216670-A1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-09 | — | — | US | disclosed |
| CN-111208710-A | Iodine-containing thermosetting silicon-containing material, resist underlayer film-forming composition for extreme ultraviolet lithography containing the same, and pattern formation method | 信越化学工业株式会社 | 2020-05-29 | — | — | CN | disclosed |
| US-20200159120-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-05-21 | — | — | US | disclosed |
| EP-2657767-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2018-10-10 | — | — | EP | disclosed |
| CN-105911819-A | Photoresist composition, hardening film making method, hardening film and application thereof | 富士胶片株式会社 | 2016-08-31 | — | — | CN | disclosed |
| US-8992790-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-31 | — | — | US | disclosed |
| US-20130284699-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-10-31 | — | — | US | disclosed |
| EP-2657767-A1 | Patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-10-30 | — | — | EP | disclosed |
| US-6596393-B1 | Corrosion-protected coaxial cable, method of making same and corrosion-inhibiting composition | COMMSCOPE PROPERTIES, LLC | 2003-07-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200159120-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | TSHR 439/4885CHRM2 2243/4885CHRM4 2968/4885 |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | TSHR 439/4885CHRM2 2243/4885CHRM4 2968/4885 |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | TSHR 439/4885CHRM2 2243/4885CHRM4 2968/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.