Propylene Glycol Diacetate

Propylene Glycol Diacetate

SCHEMBL107443

CC(=O)OCC(C)OC(C)=O.CO.COCCO

nearest known ligand 0.41

Full drug profile on Sugi Atlas →

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.41
TSHR P16473 3/20 0.39
CHRM2 P08172 1/20 0.39
CHRM4 P08173 1/20 0.39
CHRM1 P11229 1/20 0.39
TBXA2R P21731 1/20 0.39
GALR3 O60755 2/20 0.38
MAPT P10636 1/20 0.38
BLM P54132 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
ALDH1A1 P00352 2/20 0.31
HSD17B10 Q99714 2/20 0.30
LMNA P02545 1/20 0.30
ALOX15 P16050 1/20 0.30
KDM4E B2RXH2 1/20 0.30
MEN1 O00255 1/20 0.30
HPGD P15428 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Propylene Glycol Diacetate SCHEMBL107287 0.98 TDP1 (0.42) TDP1TSHRCHRM2CHRM4CHRM1
Propylene Glycol Diacetate SCHEMBL2466143 0.98 TDP1 (0.42) TDP1TSHRCHRM2CHRM4CHRM1
Propylene Glycol Diacetate SCHEMBL106743 0.95 TDP1 (0.40) TDP1TSHRCHRM2CHRM4CHRM1
Propylene Glycol Diacetate SCHEMBL107109 0.95 TDP1 (0.40) TDP1TSHRCHRM2CHRM4CHRM1
Propylene Glycol Diacetate SCHEMBL106590 0.93 TDP1 (0.39) TDP1TSHRCHRM2CHRM4CHRM1
Propylene Glycol Diacetate SCHEMBL7923868 0.91 TDP1 (0.37) TDP1TSHRCHRM2CHRM4CHRM1
Propylene Glycol Diacetate SCHEMBL9849173 0.91 TDP1 (0.37) TDP1TSHRCHRM2CHRM4CHRM1
Propylene Glycol Diacetate SCHEMBL5485959 0.91 TDP1 (0.37) TDP1TSHRCHRM2CHRM4CHRM1
Propylene Glycol Diacetate SCHEMBL107826 0.89 ALDH1A1 (0.43) TDP1TSHRCHRM2CHRM4CHRM1
2-Methoxyethanol SCHEMBL7213206 0.89 TSHR (0.44) TDP1TSHRCHRM2CHRM4CHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 69 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2518562-B1 A patterning process SHINETSU CHEMICAL CO (JP) 2019-01-16 EP disclosed
EP-2426558-B1 Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process SHINETSU CHEMICAL CO (JP) 2018-10-24 EP disclosed
US-10109485-B2 Silicon-containing condensate, composition for forming a silicon-containing resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-10-23 US disclosed
US-9971245-B2 Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9880470-B2 Composition for forming a coating type silicon-containing film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-30 US disclosed
EP-2500775-B1 PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR SHINETSU CHEMICAL CO (JP) 2018-01-03 EP disclosed
US-20170154766-A1 SILICON-CONTAINING CONDENSATE, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-01 US disclosed
US-9627204-B2 Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-18 US disclosed
US-9580623-B2 Patterning process using a boron phosphorus silicon glass film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-28 US disclosed
US-20100086872-A1 Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
EP-2172808-A1 Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
US-20090136869-A1 METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-28 US disclosed
US-20090011372-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20080290472-A1 SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE SHIN ETSU CHEMICAL CO., LTD. 2008-11-27 US disclosed
US-20080290521-A1 FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE SHIN ETSU CHEMICAL CO., LTD. 2008-11-27 US disclosed
US-20080292863-A1 SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM SHIN ETSU CHEMICAL CO., LTD. 2008-11-27 US disclosed
US-20080274432-A1 SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-06 US disclosed
US-20080026322-A1 Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20070238300-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. 2007-10-11 US disclosed