SCHEMBL721824

SCHEMBL721824

CCOCN1C(=O)NC2NC(=O)NC21

nearest known ligand 0.60

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 4/20 0.60
ABL1 P00519 3/20 0.60
RIN1 Q13671 3/20 0.60
KDM4E B2RXH2 3/20 0.44
KMT2A Q03164 1/20 0.44
MAPT P10636 2/20 0.39
GAA P10253 2/20 0.36
HTT P42858 2/20 0.35
PKM P14618 1/20 0.32
SIRT5 Q9NXA8 1/20 0.32
ALDH1A1 P00352 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL723615 0.87 TDP1 (0.59) TDP1ABL1RIN1KDM4EKMT2A
SCHEMBL723545 0.85 TDP1 (0.67) TDP1ABL1RIN1KDM4EKMT2A
SCHEMBL121703 0.85 TDP1 (0.67) TDP1ABL1RIN1KDM4EKMT2A
SCHEMBL723098 0.82 TDP1 (0.57) TDP1ABL1RIN1KDM4EKMT2A
SCHEMBL7992491 0.82 TDP1 (0.50) TDP1ABL1RIN1KDM4EKMT2A
SCHEMBL21905182 0.81 ABL1 (0.38) TDP1ABL1RIN1GAA
SCHEMBL7976768 0.81 TDP1 (0.55) TDP1ABL1RIN1KDM4EKMT2A
SCHEMBL192058 0.80 TDP1 (0.68) TDP1ABL1RIN1KDM4EKMT2A
SCHEMBL725117 0.79 TDP1 (0.54) TDP1ABL1RIN1KDM4EKMT2A
SCHEMBL721699 0.78 TDP1 (0.53) TDP1ABL1RIN1KDM4EKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110007563-B Negative photosensitive resin composition, spacer, protective film, and liquid crystal display element 奇美实业股份有限公司 2024-04-02 CN disclosed
CN-107544208-B Negative photosensitive resin composition, spacer, protective film and liquid crystal display element 奇美实业股份有限公司 2022-05-31 CN disclosed
CN-108137478-B Compound, composition thereof, purification method, resist pattern formation method, and amorphous film production method 三菱瓦斯化学株式会社 2021-09-28 CN disclosed
CN-107924123-B Material for lithography, method for producing same, composition for lithography, method for forming pattern, compound, resin, and method for purifying same 学校法人关西大学 2021-08-06 CN disclosed
CN-107428717-B Resist composition, resist pattern forming method, and polyphenol compound used for same 三菱瓦斯化学株式会社 2021-04-23 CN disclosed
CN-107533290-B Resist base material, resist composition, and method for forming resist pattern 三菱瓦斯化学株式会社 2021-04-09 CN disclosed
CN-108008600-B Radiation-sensitive composition 三菱瓦斯化学株式会社 2021-02-09 CN disclosed
CN-106462059-B Resist material, resist composition, and resist pattern forming method 三菱瓦斯化学株式会社 2020-07-28 CN disclosed
CN-106957217-B Polyhydric phenol compound for resist composition 三菱瓦斯化学株式会社 2020-07-24 CN disclosed
CN-105319852-B Photosensitive resin composition, protective film and element with protective film 奇美实业股份有限公司 2020-06-26 CN disclosed
CN-105319845-B Photosensitive resin composition, protective film and element with protective film 奇美实业股份有限公司 2020-04-21 CN disclosed
CN-105278243-B Photosensitive resin composition and application thereof 奇美实业股份有限公司 2020-01-07 CN disclosed
US-20180004086-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD OF SPACER, PRODUCTION METHOD OF PROTECTION FILM, AND LIQUID CRYSTAL DISPLAY DEVICE CHI MEI CORPORATION (TW) 2018-01-04 US disclosed
EP-2609468-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM Corporation (JP) 2013-07-03 EP disclosed
WO-2013065878-A1 METHOD OF FORMING PATTERN AND COMPOSITION FOR CROSSLINKED LAYER FORMATION TO BE USED IN THE METHOD FUJIFILM CORPORATION (JP) 2013-05-10 WO disclosed
WO-2012026622-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-03-01 WO disclosed
US-6287746-B1 PHOTOACID GENERATOR NEC CORPORATION (JP) 2001-09-11 US disclosed