SCHEMBL7219219

SCHEMBL7219219

Nc1ccc(C=Cc2ccc(NC(=O)c3ccccc3)cc2S(=O)(=O)O)cc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ PRMT1 Q99873 2/20 0.52
▸ ENPP2 Q13822 2/20 0.50
▸ SNCA P37840 3/20 0.48
▸ PLAU P00749 1/20 0.46
▸ RAD51 Q06609 1/20 0.46
▸ SETD7 Q8WTS6 1/20 0.46
▸ MEN1 O00255 3/20 0.45
▸ KMT2A Q03164 3/20 0.45
▸ NPC1 O15118 1/20 0.45
▸ TP53 P04637 1/20 0.45
▸ MAPT P10636 1/20 0.45
▸ RAB9A P51151 1/20 0.45
▸ SMN1; SMN2 Q16637 1/20 0.45
▸ CASP6 P55212 1/20 0.45
▸ CTDSP1 Q9GZU7 1/20 0.45
▸ PTPN1 P18031 1/20 0.44
▸ LMNA P02545 2/20 0.43
▸ PKM P14618 2/20 0.43
▸ POLB P06746 1/20 0.43
▸ APEX1 P27695 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9360377 0.93 PRMT1 (0.52) PRMT1ENPP2SNCAPLAUSETD7
SCHEMBL9360369 0.93 PRMT1 (0.52) PRMT1ENPP2SNCAPLAUSETD7
SCHEMBL17562375 0.93 POLB (0.52) PRMT1ENPP2SNCARAD51SETD7
SCHEMBL29360736 0.92 ENPP2 (0.53) PRMT1ENPP2PLAURAD51SETD7
SCHEMBL700458 0.92 ENPP2 (0.53) PRMT1ENPP2PLAURAD51SETD7
SCHEMBL376794 0.92 ENPP2 (0.53) PRMT1ENPP2PLAURAD51SETD7
SCHEMBL11169136 0.89 ENPP2 (0.58) PRMT1ENPP2SNCARAD51SETD7
SCHEMBL5694390 0.89 ENPP2 (0.60) PRMT1ENPP2PLAURAD51MEN1
SCHEMBL29366447 0.89 ENPP2 (0.60) PRMT1ENPP2PLAURAD51MEN1
SCHEMBL5694392 0.89 ENPP2 (0.60) PRMT1ENPP2PLAURAD51MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-RE38256-E1 Safe slurry photosensitive composition superior in image formation capabilities such as resolution and sensitivity and containing no harmful compound KABUSHIKI KAISHA TOSHIBA (JP) 2003-09-23 — — US disclosed
US-6168897-B1 PATTERNWISE-EXPOSING THE LAMINATED LAYER COMPRISING LIGHT SENSITIVE LAYER AND FLUORESCENT LIGHT-GENERATING LAYER TO ELECTROMAGNETIC RADIATION AND AN ELECTRON BEAM TO GENERATE A FLUORESCENT LIGHT CAUSING PHOTOCHEMICAL REACTION, DEVELOPING KABUSHIKI KAISHA TOSHIBA (JP) 2001-01-02 — — US disclosed
US-5928841-A Method of photoetching at 180 to 220 KABUSHIKI KAISHA TOSHIBA (JP) 1999-07-27 — — US disclosed
US-5691101-A NONTOXIC PHOTORESISTS FOR MANUFACTURE OF CATHODE RAY TUBES AND IMAGE PICKUP DEVICES, ACID GENERATING COMPOUND WHICH CATALYZES CROSSLINKING OR DECOMPOSITION OF RESIN KABUSHIKI KAISHA TOSHIBA (JP) 1997-11-25 — — US disclosed
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