SCHEMBL722145

SCHEMBL722145

CCCCOC(=O)C(N)CCCCCCCCN

nearest known ligand 0.54

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
GNAI3 P08754 1/20 0.54
GNAO1 P09471 1/20 0.54
GNAI1 P63096 1/20 0.54
GSR P00390 1/20 0.48
TLR2 O60603 2/20 0.48
NOD1 Q9Y239 2/20 0.48
DPP8 Q6V1X1 2/20 0.47
DPP9 Q86TI2 2/20 0.47
DPP7 Q9UHL4 2/20 0.47
CPB2 Q96IY4 1/20 0.45
ALDH1A1 P00352 1/20 0.42
RRM1 P23921 1/20 0.41
DPP4 P27487 1/20 0.41
DNM1 Q05193 3/20 0.40
GRIK1 P39086 1/20 0.40
GRIK2 Q13002 1/20 0.40
ATM Q13315 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL721692 1.00 GNAI3 (0.54) GNAI3GNAO1GNAI1GSRTLR2
SCHEMBL14935740 1.00 GNAI3 (0.54) GNAI3GNAO1GNAI1GSRTLR2
Hydrochloric Acid SCHEMBL6428766 0.98 GNAI3 (0.53) GNAI3GNAO1GNAI1GSRTLR2
SCHEMBL856465 0.98 GNAI3 (0.51) GNAI3GNAO1GNAI1GSRTLR2
SCHEMBL2494020 0.98 GNAI3 (0.51) GNAI3GNAO1GNAI1GSRTLR2
Hydrochloric Acid SCHEMBL9537364 0.97 GNAI3 (0.50) GNAI3GNAO1GNAI1GSRTLR2
Hydrochloric Acid SCHEMBL10580924 0.97 GNAI3 (0.50) GNAI3GNAO1GNAI1GSRTLR2
SCHEMBL7771135 0.95 GNAI3 (0.56) GNAI3GNAO1GNAI1GSRTLR2
SCHEMBL5267100 0.95 GNAI3 (0.56) GNAI3GNAO1GNAI1GSRTLR2
SCHEMBL10614116 0.95 GNAI3 (0.56) GNAI3GNAO1GNAI1GSRTLR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2609468-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM Corporation (JP) 2013-07-03 EP disclosed
EP-1645908-B1 Positive resist composition and pattern-forming method using the same FUJIFILM CORP (JP) 2013-01-09 EP disclosed
WO-2012026622-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-03-01 WO disclosed
EP-1645908-A1 Positive resist composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2006-04-12 EP disclosed
EP-1641849-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS Symyx Technologies, Inc. (US) 2006-04-05 EP disclosed
EP-1641848-A1 PHOTORESIST POLYMER COMPOSITIONS JSR Corporation (JP) 2006-04-05 EP disclosed
WO-2005003198-A1 PHOTORESIST POLYMER COMPOSITIONS JSR CORPORATION (JP) 2005-01-13 WO disclosed
WO-2005000923-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS SYMYX TECHNOLOGIES, INC. (US) 2005-01-06 WO disclosed