⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1628941 | 0.83 | — | — | |
| SCHEMBL1052912 | 0.74 | — | — | |
| SCHEMBL2004835 | 0.74 | — | — | |
| SCHEMBL7263423 | 0.71 | — | — | |
| SCHEMBL1400764 | 0.70 | ALDH1A1 (0.44) | — | |
| SCHEMBL4901878 | 0.70 | — | — | |
| SCHEMBL3898925 | 0.69 | — | — | |
| SCHEMBL8162371 | 0.67 | — | — | |
| SCHEMBL216231 | 0.67 | — | — | |
| SCHEMBL53268 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 109 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11908697-B2 | Interconnect structure having a carbon-containing barrier layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2024-02-20 | — | — | US | claimed |
| US-20230107176-A1 | Interconnect Structure Having a Carbon-Containing Barrier Layer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-04-06 | — | — | US | claimed |
| US-20210343535-A1 | Interconnect Structure Having a Carbon-Containing Barrier Layer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-11-04 | — | — | US | claimed |
| US-9324606-B2 | Self-aligned repairing process for barrier layer | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2016-04-26 | — | — | US | claimed |
| US-20150194343-A1 | SELF-ALIGNED REPAIRING PROCESS FOR BARRIER LAYER | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2015-07-09 | — | — | US | claimed |
| US-20140072479-A1 | Delivery Equipment for the Solid Precursor Particles | NANMAT TECHNOLOGY CO., LTD. (TW) | 2014-03-13 | — | — | US | claimed |
| US-20130059078-A1 | USE OF RUTHENIUM TETROXIDE AS A PRECURSOR AND REACTANT FOR THIN FILM DEPOSITIONS | AMERICAN AIR LIQUIDE, INC. | 2013-03-07 | — | — | US | claimed |
| US-8058164-B2 | Methods of fabricating electronic devices using direct copper plating | LAM RESEARCH CORPORATION (US) | 2011-11-15 | — | — | US | claimed |
| WO-2011106072-A2 | USE OF RUTHENIUM TETROXIDE AS A PRECURSOR AND REACTANT FOR THIN FILM DEPOSITIONS | L'AIR LIQUIDE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2011-09-01 | — | — | WO | claimed |
| US-7691442-B2 | Ruthenium or cobalt as an underlayer for tungsten film deposition | APPLIED MATERIALS, INC. (US) | 2010-04-06 | — | — | US | claimed |
| US-20090142474-A1 | RUTHENIUM AS AN UNDERLAYER FOR TUNGSTEN FILM DEPOSITION | APPLIED MATERIALS, INC. | 2009-06-04 | — | — | US | claimed |
| US-20070259111-A1 | METHOD AND APPARATUS FOR PHOTO-EXCITATION OF CHEMICALS FOR ATOMIC LAYER DEPOSITION OF DIELECTRIC FILM | APPLIED MATERIALS, INC. | 2007-11-08 | — | — | US | claimed |
| US-7259058-B2 | Fabricating method of semiconductor integrated circuits | RENESAS TECHONOLOGY CORP. (JP) | 2007-08-21 | — | — | US | claimed |
| US-6992022-B2 | Fabrication method for semiconductor integrated devices | RENESAS TECHNOLOGY CORP. (JP) | 2006-01-31 | — | — | US | claimed |
| US-20040171210-A1 | Fabrication method for semiconductor integrated devices | RENESAS TECHNOLOGY CORPORATION | 2004-09-02 | — | — | US | claimed |
| US-6743739-B2 | FORMING A RUTHENIUM FILM ON THE SURFACE OF A SUBSTRATE WHICH HAS A CONCAVE PORTION BY CHEMICAL VAPOR DEPOSITION FROM AN ORGANORUTHENIUM COMPOUND AS A PRECURSOR IN THE PRESENCE OF AN OXIDIZING GAS A GAS WHICH HAS A LOWER TENDENCY TO BE ADSORBED | RENESAS TECHNOLOGY CORPORATION (JP) | 2004-06-01 | — | — | US | claimed |
| US-20020192899-A1 | Fabrication method for semiconductor integrated devices | RENESAS ELECTRONICS CORPORATION (JP) | 2002-12-19 | — | — | US | claimed |
| US-20020102826-A1 | Fabricating method of semiconductor integrated circuits | RENESAS ELECTRONICS CORPORATION (JP) | 2002-08-01 | — | — | US | claimed |
| US-5403620-A | Catalysis in organometallic CVD of thin metal films | REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 1995-04-04 | — | — | US | claimed |
| US-5130172-A | Coating on a substrate a metal, exposure and vaporization and reaction with hydrogenation | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 1992-07-14 | — | — | US | claimed |