SCHEMBL74764

SCHEMBL74764

C=C(C)C(=O)OC1CC(C(O)(C(F)(F)F)C(F)(F)F)CC(C(O)(C(F)(F)F)C(F)(F)F)C1

nearest known ligand 0.31

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Methacrylic Acid SCHEMBL5366895 0.95 — —
SCHEMBL2741138 0.94 — —
SCHEMBL26043219 0.93 — —
SCHEMBL775869 0.93 — —
SCHEMBL179826 0.87 — —
SCHEMBL19771561 0.86 — —
SCHEMBL19261616 0.86 — —
SCHEMBL10087715 0.86 ALDH1A1 (0.31) ALDH1A1
SCHEMBL24008859 0.85 — —
SCHEMBL15183384 0.85 GPR35 (0.30) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 705 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8632948-B2 Positive-working photoimageable bottom antireflective coating AZ ELECTRONIC MATERIALS USA CORP. (US) 2014-01-21 — — US claimed
US-12372867-B2 Photoresists comprising multiple acid generator compounds DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC (US) 2025-07-29 — — US disclosed
US-12038689-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-16 — — US disclosed
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 — — US disclosed
US-20240134276-A1 PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT, FLUORINE-CONTAINING RESIN CURED FILM, AND DISPLAY CENTRAL GLASS COMPANY, LIMITED (JP) 2024-04-25 — — US disclosed
US-20240134278-A1 SURFACE MODIFIER, PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT, AND DISPLAY CENTRAL GLASS COMPANY, LIMITED (JP) 2024-04-25 — — US disclosed
EP-4317197-A1 METHOD FOR PRODUCING POLYMER BY REVERSIBLE ADDITION-FRAGMENTATION CHAIN TRANSFER POLYMERIZATION FUJIFILM Corporation (JP) 2024-02-07 — — EP disclosed
EP-4317204-A1 MANUFACTURING METHOD FOR POLYMER HAVING THIOCARBONYLTHIO GROUP REMOVED FUJIFILM Corporation (JP) 2024-02-07 — — EP disclosed
US-20240027905-A1 PHOTOACID GENERATORS, PHOTORESIST COMPOSITIONS, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-25 — — US disclosed
US-20240027908-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-01-25 — — US disclosed
US-20070105044-A1 Fluorine-containing polymer coating composition, method for forming fluorine-containing polymer film using coating composition, and method for forming photoresist or lithographic pattern CENTRAL GLASS COMPANY, LIMITED (JP) 2007-05-10 — — US disclosed
US-20070105044-A1 Fluorine-containing polymer coating composition, method for forming fluorine-containing polymer film using coating composition, and method for forming photoresist or lithographic pattern CENTRAL GLASS COMPANY, LIMITED (JP) 2007-05-10 — — US disclosed
US-20070072115-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-29 — — US disclosed
US-20070072115-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-29 — — US disclosed
EP-1754999-A2 Positive resist composition and method of pattern formation with the same Fuji Photo Film Co., Ltd. (JP) 2007-02-21 — — EP disclosed
US-20070026341-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-02-01 — — US disclosed
US-20070003867-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-04 — — US disclosed
US-20070003867-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-04 — — US disclosed
US-20050227173-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-10-13 — — US disclosed
US-20050227174-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-10-13 — — US disclosed
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