SCHEMBL75247

SCHEMBL75247

C=C(C)C(=O)OCCC(O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.47

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.47
TSHR P16473 3/20 0.46
ALDH1A1 P00352 2/20 0.37
POLB P06746 1/20 0.36
APEX1 P27695 1/20 0.36
HTT P42858 1/20 0.36
TDP1 Q9NUW8 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL75150 0.89 TSHR (0.51) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL13486939 0.88 TSHR (0.54) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL24600152 0.85
SCHEMBL9610668 0.84 THRB (0.46) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL28255783 0.83 THRB (0.48) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL4318664 0.83 THRB (0.48) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL1415468 0.83 THRB (0.48) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL615661 0.82 THRB (0.52) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL15432454 0.81 THRB (0.50) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL75528 0.81 TSHR (0.44) THRBTSHRALDH1A1POLBAPEX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 307 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240427248-A1 RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION SAMSUNG SDI CO., LTD. (KR) 2024-12-26 US disclosed
CN-116970119-A Fluorine-containing resin for immersion photoresist and preparation method and application thereof 宁波南大光电材料有限公司 2023-10-31 CN disclosed
US-11786160-B2 Bio-electrode composition, bio-electrode, and method for manufacturing bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-17 US disclosed
WO-2023195255-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2023-10-12 WO disclosed
WO-2023189502-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTODEGRADABLE BASE JSR株式会社 2023-10-05 WO disclosed
WO-2023153296-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-08-17 WO disclosed
WO-2023153294-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-08-17 WO disclosed
WO-2023153295-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-08-17 WO disclosed
US-20230251575-A1 PHOTORESIST TOPCOAT COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-08-10 US disclosed
US-20230244143-A9 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND JSR CORPORATION (JP) 2023-08-03 US disclosed
US-20090208886-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-20090208886-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-20090087786-A1 PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 US disclosed
US-20090087786-A1 PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 US disclosed
US-20090081595-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20090081595-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed