SCHEMBL75293

SCHEMBL75293

C=C(C)C(=O)OCCOC1C2CC3C(=O)OC1C3O2

nearest known ligand 0.35

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.35
ALDH1A1 P00352 2/20 0.34
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32
TSHR P16473 3/20 0.32
POLB P06746 1/20 0.31
APEX1 P27695 1/20 0.31
HTT P42858 1/20 0.31
TDP1 Q9NUW8 1/20 0.31
CYP3A4 P08684 1/20 0.30
CYP2D6 P10635 1/20 0.30
CYP2C19 P33261 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12914710 0.92 ALDH1A1 (0.31) ALDH1A1
SCHEMBL16372802 0.89 ALDH1A1 (0.35) ALDH1A1TSHRCYP3A4CYP2D6CYP2C19
SCHEMBL10159621 0.87
SCHEMBL74843 0.85 ALDH1A1 (0.32) THRBALDH1A1TSHR
SCHEMBL15078178 0.83 ALDH1A1 (0.31) ALDH1A1
SCHEMBL10159623 0.83 TSHR (0.34) ALDH1A1TSHRPOLBAPEX1HTT
SCHEMBL14665432 0.83 GAA (0.33) ALDH1A1CYP2C19
SCHEMBL13042778 0.82 TSHR (0.36) ALDH1A1TSHRPOLBAPEX1HTT
SCHEMBL13088043 0.82 ALDH1A1 (0.33) ALDH1A1
SCHEMBL75071 0.82 ALDH1A1 (0.33) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 460 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10012903-B2 Resist composition and pattern forming process SHIN-ESTU CHEMICAL CO., LTD. (JP) 2018-07-03 US disclosed
US-10005868-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-9958776-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-01 US disclosed
US-9958777-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-01 US disclosed
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9910358-B2 Patterning process and chemically amplified negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-06 US disclosed
US-9897914-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-20 US disclosed
US-20180024435-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-25 US disclosed
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-20090087786-A1 PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 US disclosed
US-20090087786-A1 PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 US disclosed
US-20090081595-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20090081595-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053651-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed