Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13088043 | 1.00 | ALDH1A1 (0.33) | ALDH1A1 | |
| SCHEMBL12914689 | 0.98 | ALDH1A1 (0.32) | ALDH1A1 | |
| SCHEMBL14328349 | 0.91 | — | — | |
| SCHEMBL17247242 | 0.90 | ALDH1A1 (0.33) | ALDH1A1 | |
| SCHEMBL74843 | 0.89 | ALDH1A1 (0.32) | ALDH1A1 | |
| SCHEMBL10159755 | 0.87 | — | — | |
| SCHEMBL15396428 | 0.87 | — | — | |
| SCHEMBL12914710 | 0.87 | ALDH1A1 (0.31) | ALDH1A1 | |
| SCHEMBL10159623 | 0.87 | TSHR (0.34) | ALDH1A1 | |
| SCHEMBL23254337 | 0.86 | KDM4E (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 601 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11874603-B2 | Photoresist composition comprising amide compound and pattern formation methods using the same | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2024-01-16 | — | — | US | disclosed |
| US-11874603-B2 | Photoresist composition comprising amide compound and pattern formation methods using the same | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2024-01-16 | — | — | US | disclosed |
| US-11829069-B2 | Photoresist compositions and methods | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2023-11-28 | — | — | US | disclosed |
| US-11829069-B2 | Photoresist compositions and methods | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2023-11-28 | — | — | US | disclosed |
| US-20230099348-A1 | PHOTORESIST COMPOSITION COMPRISING AMIDE COMPOUND AND PATTERN FORMATION METHODS USING THE SAME | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2023-03-30 | — | — | US | disclosed |
| US-11487203-B2 | Monomers, polymers and photoresist compositions | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2022-11-01 | — | — | US | disclosed |
| EP-2414896-B1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORP (JP) | 2020-11-11 | — | — | EP | disclosed |
| US-10766992-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2020-09-08 | — | — | US | disclosed |
| US-10719014-B2 | Photoresists comprising amide component | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2020-07-21 | — | — | US | disclosed |
| US-20200218154-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-09 | — | — | US | disclosed |
| US-20090053657-A1 | PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-26 | — | — | US | disclosed |
| US-20090053657-A1 | PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-26 | — | — | US | disclosed |
| US-20080227037-A1 | Resist lower layer film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080227037-A1 | Resist lower layer film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080220381-A1 | Antireflection film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080220381-A1 | Antireflection film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080199806-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-08-21 | — | — | US | disclosed |
| US-20080199806-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-08-21 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10719014-B2 | Photoresists comprising amide component | ASPH, ALAD, SUN2 | ALDH1A1 823/4885 |
| US-11487203-B2 | Monomers, polymers and photoresist compositions | MAP1LC3C, LCP1, PIN1 | ALDH1A1 2061/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.