Known targets — ChEMBL curated mechanism
FGFR1FGFR2FGFR3FGFR4FLT1FLT4KDRPDGFRAPDGFRB
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1904 | 0.95 | — | — | |
| SCHEMBL126970 | 0.95 | — | — | |
| SCHEMBL2058760 | 0.95 | CA5A (0.46) | — | |
| Bromide SCHEMBL11364017 | 0.91 | — | — | |
| SCHEMBL20533683 | 0.91 | — | — | |
| Methyl Alcohol SCHEMBL23421569 | 0.91 | — | — | |
| SCHEMBL20533648 | 0.91 | — | — | |
| SCHEMBL20583855 | 0.91 | — | — | |
| SCHEMBL6917272 | 0.91 | — | — | |
| Phosphine SCHEMBL1051170 | 0.91 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110028377-A | A kind of preparation process of 1,1- Difluoroethane | 内蒙古永和氟化工有限公司 | 2019-07-19 | — | — | CN | claimed |
| US-20240229282-A1 | PROCESS FOR HYSTERETIC CURRENT-VOLTAGE MEDIATED VOID-FREE SUPERCONFORMAL AND BOTTOM-UP FILLING | GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE | 2024-07-11 | — | — | US | disclosed |
| CN-110028377-B | Preparation process of 1,1-difluoroethane | 内蒙古永和氟化工有限公司 | 2023-07-14 | — | — | CN | disclosed |
| WO-2022241088-A1 | PROCESS FOR HYSTERETIC CURRENT-VOLTAGE MEDIATED VOID FREE SUPERCONFORMAL AND BOTTOM-UP FILLING | GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE (US) | 2022-11-17 | — | — | WO | disclosed |
| US-20190284714-A9 | PROCESS FOR FORMING A TRANSITION ZONE TERMINATED SUPERCONFORMAL FILLING | THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE | 2019-09-19 | — | — | US | disclosed |
| US-20180298514-A1 | PROCESS FOR FORMING A TRANSITION ZONE TERMINATED SUPERCONFORMAL FILLING | GOVERNMENT OF THE US SECRETARY OF COMMERCE (US) | 2018-10-18 | — | — | US | disclosed |
| CN-1142327-C | Electroplating of low-stress nickel | 阿托泰克德国有限公司 | 2004-03-17 | — | — | CN | disclosed |
| EP-0925388-B1 | ELECTROPLATING OF NICKEL-PHOSPHORUS ALLOYS COATINGS | ATOTECH DEUTSCHLAND GMBH (DE) | 2002-10-02 | — | — | EP | disclosed |
| US-6099624-A | Nickel-phosphorus alloy coatings | ELF ATOCHEM NORTH AMERICA, INC. (US) | 2000-08-08 | — | — | US | disclosed |
| EP-0925388-A1 | ELECTROPLATING OF NICKEL-PHOSPHORUS ALLOYS COATINGS | ATOTECH Deutschland GmbH (DE) | 1999-06-30 | — | — | EP | disclosed |
| CN-1213019-A | Electroplating of low-stress nickel | ATOTECH DEUTSCHLAND GMBH (DE) | 1999-04-07 | — | — | CN | disclosed |
| WO-1999002765-A1 | ELECTROPLATING OF NICKEL-PHOSPHORUS ALLOYS COATINGS | ATOTECH DEUTSCHLAND GMBH (US) | 1999-01-21 | — | — | WO | disclosed |