Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMPD1 | P17405 | 1/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
| ▸ | ATM | Q13315 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | CES2 | O00748 | 1/20 | 0.32 |
| ▸ | GGPS1 | O95749 | 2/20 | 0.30 |
| ▸ | FDPS | P14324 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7185236 | 0.75 | TSHR (0.46) | SMPD1MEN1MAPTKMT2AATM | |
| SCHEMBL7180580 | 0.75 | TSHR (0.44) | SMPD1ATMCES2 | |
| SCHEMBL7185274 | 0.74 | TSHR (0.49) | SMPD1MEN1MAPTKMT2AATM | |
| SCHEMBL7185920 | 0.74 | TSHR (0.43) | SMPD1MEN1MAPTKMT2AATM | |
| SCHEMBL9800162 | 0.73 | SMPD1 (0.36) | SMPD1MEN1MAPTKMT2AATM | |
| SCHEMBL869305 | 0.68 | SMPD1 (0.36) | SMPD1CES2GGPS1FDPS | |
| SCHEMBL6892063 | 0.65 | SMPD1 (0.38) | SMPD1MEN1MAPTKMT2AATM | |
| SCHEMBL5376060 | 0.65 | SMPD1 (0.38) | SMPD1CES2GGPS1FDPS | |
| SCHEMBL7773376 | 0.65 | SMPD1 (0.38) | SMPD1CES2GGPS1FDPS | |
| SCHEMBL6883229 | 0.65 | SMPD1 (0.38) | SMPD1CES2GGPS1FDPS |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0855621-B1 | Manufacturing method and apparatus for semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 2002-04-17 | — | — | EP | disclosed |
| US-6174650-B1 | FORMING RESIST FILM IN CLEAN ROOM BY CONDUCTING SURFACE TREATMENT ON SEMICONDUCTOR SUBSTRATE WITH SILANE COMPOUND; COATING SEMICONDUCTOR SUBSTRATE WITH CHEMICALLY AMPLIFIED RESIST; EXPOSING AND DEVELOPING | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2001-01-16 | — | — | US | disclosed |
| US-6174650-B1 | FORMING RESIST FILM IN CLEAN ROOM BY CONDUCTING SURFACE TREATMENT ON SEMICONDUCTOR SUBSTRATE WITH SILANE COMPOUND; COATING SEMICONDUCTOR SUBSTRATE WITH CHEMICALLY AMPLIFIED RESIST; EXPOSING AND DEVELOPING | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2001-01-16 | — | — | US | disclosed |
| US-6133465-A | IMPROVING THE ADHESION BETWEEN A SEMICONDUCTOR SUBSTRATE AND A RESIST PATTERN AS WELL AS PREVENTING AN INSOLUBLE SKIN LAYER FROM BEING FORMED ON THE SURFACE OF A RESIST PATTERN IN USING A CHEMICALLY AMPLIFIED RESIST | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2000-10-17 | — | — | US | disclosed |
| EP-0855621-A3 | Manufacturing method and apparatus for semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1998-09-02 | — | — | EP | disclosed |
| EP-0855621-A2 | Manufacturing method and apparatus for semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1998-07-29 | — | — | EP | disclosed |
| EP-0855621-A2 | Manufacturing method and apparatus for semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1998-07-29 | — | — | EP | disclosed |
| EP-0855622-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1998-07-29 | — | — | EP | disclosed |
| EP-0837369-A1 | Pattern formation method and surface treatment agent | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1998-04-22 | — | — | EP | disclosed |