⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL476204 | 0.79 | EPHX1 (0.33) | — | |
| SCHEMBL7188636 | 0.74 | ALDH1A1 (0.38) | — | |
| SCHEMBL476203 | 0.73 | CES2 (0.31) | — | |
| SCHEMBL7183975 | 0.73 | — | — | |
| SCHEMBL699911 | 0.69 | ALDH1A1 (0.30) | — | |
| SCHEMBL30018076 | 0.69 | ALDH1A1 (0.30) | — | |
| SCHEMBL1471435 | 0.69 | ALDH1A1 (0.30) | — | |
| SCHEMBL3785199 | 0.68 | GRIK2 (0.31) | — | |
| SCHEMBL7592755 | 0.68 | CES2 (0.35) | — | |
| SCHEMBL7592749 | 0.68 | CES2 (0.35) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0855621-B1 | Manufacturing method and apparatus for semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 2002-04-17 | — | — | EP | disclosed |
| EP-0837369-B1 | Pattern formation method and surface treatment agent | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 2001-12-19 | — | — | EP | disclosed |
| US-6174650-B1 | FORMING RESIST FILM IN CLEAN ROOM BY CONDUCTING SURFACE TREATMENT ON SEMICONDUCTOR SUBSTRATE WITH SILANE COMPOUND; COATING SEMICONDUCTOR SUBSTRATE WITH CHEMICALLY AMPLIFIED RESIST; EXPOSING AND DEVELOPING | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2001-01-16 | — | — | US | disclosed |
| US-6133465-A | IMPROVING THE ADHESION BETWEEN A SEMICONDUCTOR SUBSTRATE AND A RESIST PATTERN AS WELL AS PREVENTING AN INSOLUBLE SKIN LAYER FROM BEING FORMED ON THE SURFACE OF A RESIST PATTERN IN USING A CHEMICALLY AMPLIFIED RESIST | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2000-10-17 | — | — | US | disclosed |
| US-6074804-A | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2000-06-13 | — | — | US | disclosed |
| EP-0889367-A1 | Method for forming a photoresist pattern | Matsushita Electric Industrial Co., Ltd. (JP) | 1999-01-07 | — | — | EP | disclosed |
| EP-0855621-A2 | Manufacturing method and apparatus for semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1998-07-29 | — | — | EP | disclosed |
| EP-0855622-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1998-07-29 | — | — | EP | disclosed |
| EP-0837369-A1 | Pattern formation method and surface treatment agent | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1998-04-22 | — | — | EP | disclosed |