SCHEMBL759545

SCHEMBL759545

CC(=O)c1ccc([S+](C)Cc2ccccc2C)cc1

nearest known ligand 0.57

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
MAOB P27338 6/20 0.57
MAOA P21397 2/20 0.42
LMNA P02545 2/20 0.41
MAPT P10636 2/20 0.41
SMN1; SMN2 Q16637 2/20 0.41
HPGD P15428 4/20 0.40
ALDH1A1 P00352 2/20 0.40
KMT2A Q03164 2/20 0.38
TAS2R14 Q9NYV8 1/20 0.36
CTBP2 P56545 1/20 0.36
SIRT5 Q9NXA8 1/20 0.36
CA2 P00918 1/20 0.36
NPC1 O15118 1/20 0.36
RAB9A P51151 1/20 0.36
TAAR1 Q96RJ0 1/20 0.36
MEN1 O00255 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL3480268 0.87 MAOB (0.46) MAOBMAOALMNAMAPTKMT2A
SCHEMBL31008827 0.82 MAOB (0.48) MAOBLMNAMAPTSMN1; SMN2ALDH1A1
SCHEMBL29561503 0.80 ESR1 (0.39) MAOBMAPTHPGDALDH1A1KMT2A
SCHEMBL758837 0.80 ESR1 (0.39) MAOBMAPTHPGDALDH1A1KMT2A
SCHEMBL4545351 0.80 KMT2A (0.40) MAOBLMNAMAPTSMN1; SMN2HPGD
Hydrochloric Acid SCHEMBL9331155 0.79 ESR1 (0.38) MAOBMAPTHPGDALDH1A1KMT2A
SCHEMBL756534 0.77 KMT2A (0.47) MAOBMAPTHPGDALDH1A1KMT2A
SCHEMBL30423338 0.75 ESR2 (0.36) MAOBMAPTHPGDALDH1A1KMT2A
SCHEMBL30217958 0.75 ESR1 (0.36) MAOBMAPTHPGDALDH1A1KMT2A
SCHEMBL29843345 0.75 ESR1 (0.36) MAOBMAPTHPGDALDH1A1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024237033-A1 COMPOSITION FOR SEMICONDUCTOR DEVICE PROCESSING AND METHOD FOR PRODUCING MODIFIED SUBSTRATE 富士フイルム株式会社 2024-11-21 WO disclosed
CN-115210322-A Resin composition, wiring board, and method for producing conductive pattern 东丽株式会社 2022-10-18 CN disclosed
US-11422464-B2 Photosensitive resin composition, method of producing electrically conductive pattern, substrate, touch panel, and display TORAY INDUSTRIES, INC. (JP) 2022-08-23 US disclosed
CN-109791352-B Photosensitive resin composition, method for producing conductive pattern, substrate, touch panel, and display 东丽株式会社 2022-07-29 CN disclosed
US-11127698-B2 Method for producing conductive film, method for producing field effect transistor using same, and method for producing wireless communication device TORAY INDUSTRIES, INC. (JP) 2021-09-21 US disclosed
WO-2021095766-A1 COMPOSITION, PRODUCTION METHOD FOR SUBSTRATE, AND POLYMER JSR株式会社 2021-05-20 WO disclosed
WO-2020250783-A1 COMPOSITION, METHOD FOR PRODUCING SUBSTRATE, AND POLYMER JSR株式会社 2020-12-17 WO disclosed
US-20200203292-A1 METHOD FOR PRODUCING CONDUCTIVE FILM, METHOD FOR PRODUCING FIELD EFFECT TRANSISTOR USING SAME, AND METHOD FOR PRODUCING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2020-06-25 US disclosed
CN-106909028-B Photosensitive resin composition, protective film and liquid crystal display element 奇美实业股份有限公司 2020-06-05 CN disclosed
CN-110809807-A Method for manufacturing conductive film, method for manufacturing field effect transistor using same, and method for manufacturing wireless communication device 东丽株式会社 2020-02-18 CN disclosed
US-8338510-B2 Photosensitive siloxane composition, cured film formed therefrom and device having the cured film TORAY INDUSTRIES, INC. (JP) 2012-12-25 US disclosed
US-20120141936-A1 PHOTO-CURING POLYSILOXANE COMPOSITION AND PROTECTIVE FILM FORMED FROM THE SAME CHI MEI CORPORATION (TW) 2012-06-07 US disclosed
US-20120052439-A1 PHOTO-CURING POLYSILOXANE COMPOSITION AND PROTECTIVE FILM FORMED FROM THE SAME CHI MEI CORPORATION (TW) 2012-03-01 US disclosed
US-20110008730-A1 POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, CURED FILM, INTERLAYER INSULATING FILM, METHOD OF FORMING INTERLAYER INSULATING FILM, DISPLAY DEVICE, AND SILOXANE POLYMER FOR FORMING INTERLAYER INSULATING FILM JSR CORPORATION (JP) 2011-01-13 US disclosed
US-20100273109-A1 METHOD FOR PRODUCING OPTICAL PART CANON KABUSHIKI KAISHA (JP) 2010-10-28 US disclosed
EP-2243622-A2 Method for producing optical part CANON KABUSHIKI KAISHA (JP) 2010-10-27 EP disclosed
US-20100129618-A1 PHOTOSENSITIVE SILOXANE COMPOSITION, CURED FILM FORMED THEREFROM AND DEVICE HAVING THE CURED FILM TORAY INDUSTRIES, INC. (JP) 2010-05-27 US disclosed
US-7374856-B2 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2008-05-20 US disclosed
US-20060115766-A1 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2006-06-01 US disclosed
EP-1662322-A2 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES, INC. (JP) 2006-05-31 EP disclosed