SCHEMBL7624316

SCHEMBL7624316

C[Ga](C)O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26624 0.61
SCHEMBL3483813 0.55
SCHEMBL9082350 0.55
SCHEMBL31165841 0.55
Arsenic SCHEMBL9006140 0.55
SCHEMBL2933743 0.55
Ethane SCHEMBL6423263 0.55
Methyl Alcohol SCHEMBL3482738 0.55
Ammonia Solution, Strong SCHEMBL3501220 0.55
Tetramethylammonium Ion SCHEMBL22360983 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-4931573-A CATALYTIC HYDROGENATION OF DICARBOXYLIC ACID, ESTER OR ANHYDRIDE WITH RUTHENIUM, PHOSPHINES AND GROUPS 3,4,5 COMPOUNDS MITSUBISHI KASEI CORPORATION (JP) 1990-06-05 US claimed
US-20260125794-A1 METHOD FOR FORMING METAL OXIDE SEMICONDUCTOR ENERGY LAB (JP) 2026-05-07 US disclosed
US-20260052673-A1 MEMORY DEVICE AND METHOD FOR MANUFACTURING THE MEMORY DEVICE SEMICONDUCTOR ENERGY LAB (JP) 2026-02-19 US disclosed
US-12540397-B2 Method for forming metal oxide SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2026-02-03 US disclosed
CN-119769187-A Memory device and method for manufacturing the same 株式会社半导体能源研究所 2025-04-04 CN disclosed
WO-2025022294-A1 OXIDE SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR LAYER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 株式会社半導体エネルギー研究所 2025-01-30 WO disclosed
WO-2024084366-A1 SEMICONDUCTOR DEVICE AND STORAGE DEVICE 株式会社半導体エネルギー研究所 2024-04-25 WO disclosed
WO-2024047500-A1 STORAGE DEVICE AND STORAGE DEVICE PRODUCTION METHOD 株式会社半導体エネルギー研究所 2024-03-07 WO disclosed
US-20240026537-A1 METHOD FOR FORMING METAL OXIDE SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2024-01-25 US disclosed
EP-4306677-A1 METHOD FOR FORMING METAL OXIDE Semiconductor Energy Laboratory Co., Ltd. (JP) 2024-01-17 EP disclosed
CN-117403206-A Method for depositing metal oxide 株式会社半导体能源研究所 2024-01-16 CN disclosed
EP-0372617-B2 Synthesis of methylaluminoxanes TEXAS ALKYLS INC (US) 2002-12-18 EP disclosed
EP-0372617-B1 Synthesis of methylaluminoxanes TEXAS ALKYLS INC (US) 1995-06-28 EP disclosed
US-5086024-A Metallocene and methyl aluminoxane TEXAS ALKYLS, INC. (US) 1992-02-04 US disclosed
US-5079372-A Hydrogenation of dicarboxylic acid, dicarboxylic acid anhydride and/or dicarboxylic acid ester MITSUBISHI KASEI CORPORATION (JP) 1992-01-07 US disclosed
US-5041584-A Reacting tetraalkyldialuminoxane with trimethylaluminum TEXAS ALKYLS, INC. (US) 1991-08-20 US disclosed
US-4960878-A REACTING TETRAALKYLALUMINOXANE WITH TRIMETHYLALUMINUM; USEFUL AS COCATALYSTS FOR OLEFIN POLYMERIZATION TEXAS ALKYLS, INC. (US) 1990-10-02 US disclosed
EP-0372617-A2 Synthesis of methylaluminoxanes TEXAS ALKYLS, INC. (US) 1990-06-13 EP disclosed
US-4931573-A CATALYTIC HYDROGENATION OF DICARBOXYLIC ACID, ESTER OR ANHYDRIDE WITH RUTHENIUM, PHOSPHINES AND GROUPS 3,4,5 COMPOUNDS MITSUBISHI KASEI CORPORATION (JP) 1990-06-05 US disclosed