⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL26624 | 0.89 | — | — | |
| SCHEMBL2933743 | 0.80 | — | — | |
| Ammonia Solution, Strong SCHEMBL3501220 | 0.80 | — | — | |
| SCHEMBL9082350 | 0.80 | — | — | |
| Arsenic SCHEMBL9006140 | 0.80 | — | — | |
| SCHEMBL31165841 | 0.80 | — | — | |
| SCHEMBL7219017 | 0.68 | — | — | |
| SCHEMBL9941130 | 0.68 | — | — | |
| SCHEMBL7624316 | 0.55 | — | — | |
| SCHEMBL301437 | 0.55 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115295719-A | Epitaxial layer structure of indium arsenide thin film, hall device and preparation method | 苏州矩阵光电有限公司 | 2022-11-04 | — | — | CN | disclosed |
| EP-2262007-B1 | Nitride semiconductor element with supporting substrate | NICHIA CORP (JP) | 2016-11-23 | — | — | EP | disclosed |
| EP-2262008-B1 | Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element | NICHIA CORP (JP) | 2015-12-16 | — | — | EP | disclosed |
| EP-2105977-B1 | Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element | NICHIA CORP (JP) | 2014-06-25 | — | — | EP | disclosed |
| EP-2262007-A2 | Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element | Nichia Corporation (JP) | 2010-12-15 | — | — | EP | disclosed |
| EP-2262008-A2 | Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element | Nichia Corporation (JP) | 2010-12-15 | — | — | EP | disclosed |
| EP-1471583-B1 | NITRIDE SEMICONDUCTOR DEVICE HAVING SUPPORT SUBSTRATE AND ITS MANUFACTURING METHOD | NICHIA CORP (JP) | 2009-10-07 | — | — | EP | disclosed |
| EP-2105977-A1 | Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element | Nichia Corporation (JP) | 2009-09-30 | — | — | EP | disclosed |
| US-7049635-B2 | Opposed terminal structure having a nitride semiconductor element | NICHIA CORPORATION (JP) | 2006-05-23 | — | — | US | disclosed |
| US-20050211993-A1 | Opposed terminal structure having a nitride semiconductor element | SANO MASAHIKO | 2005-09-29 | — | — | US | disclosed |
| US-20040104390-A1 | Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element | SANO MASAHIKO (JP) | 2004-06-03 | — | — | US | disclosed |
| US-6744071-B2 | Nitride semiconductor element with a supporting substrate | NICHIA CORPORATION (JP) | 2004-06-01 | — | — | US | disclosed |
| US-6735231-B2 | Semiconductor laser device | SHARP KABUSHIKI KAISHA (JP) | 2004-05-11 | — | — | US | disclosed |
| US-6696309-B2 | Methods for making electrooptical device and driving substrate therefor | YAMANAKA HIDEO (JP) | 2004-02-24 | — | — | US | disclosed |
| US-20030141506-A1 | Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element | NICHIA CORPORATION (JP) | 2003-07-31 | — | — | US | disclosed |
| US-20030124755-A1 | Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device | YAMANAKA HIDEO (JP) | 2003-07-03 | — | — | US | disclosed |
| US-6492190-B2 | Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device | SONY CORPORATION (JP) | 2002-12-10 | — | — | US | disclosed |
| US-20020181527-A1 | Semiconductor laser device | SHARP KABUSHIKI KAISHA (JP) | 2002-12-05 | — | — | US | disclosed |
| US-20020013011-A1 | Methods for making electrooptical device and driving substrate therefor | YAMANAKA HIDEO (JP) | 2002-01-31 | — | — | US | disclosed |
| US-20020006681-A1 | Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device | SONY CORPORATION (JP) | 2002-01-17 | — | — | US | disclosed |