Ammonia Solution, Strong

Ammonia Solution, Strong

SCHEMBL3501220

C[Ga](C)C.N

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26624 0.89
Arsenic SCHEMBL9006140 0.80
SCHEMBL31165841 0.80
SCHEMBL2933743 0.80
SCHEMBL7219017 0.68
SCHEMBL9941130 0.68
Tetramethylammonium Ion SCHEMBL1520826 0.60
Tetramethylammonium Ion SCHEMBL22436611 0.60 CHRNB2 (0.80)
SCHEMBL7624316 0.55
Ethane SCHEMBL174047 0.52

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-106159047-B Light emitting diode epitaxial structure with PN doped quantum barrier and preparation method thereof 华南理工大学 2020-02-18 CN claimed
CN-106356433-A Light-emitting diode structure with component and thickness gradient stress release layer and preparation method of light-emitting diode structure 华南理工大学 2017-01-25 CN claimed
CN-106159047-A There is the light emitting diode epitaxial structure at PN doping quantum base and preparation method thereof 华南理工大学 2016-11-23 CN claimed
CN-104979445-A Light-emitting diode structure with indium-containing conductive layer and preparation method therefor UNIV SOUTH CHINA TECH 2015-10-14 CN claimed
US-20210166913-A1 APPARATUS AND METHOD FOR FILM FORMATION GALLIUM ENTERPRISES PTY LTD (AU) 2021-06-03 US disclosed
CN-106159047-B Light emitting diode epitaxial structure with PN doped quantum barrier and preparation method thereof 华南理工大学 2020-02-18 CN disclosed
CN-208135100-U The collection device of trimethyl gallium 江苏南大光电材料股份有限公司 2018-11-23 CN disclosed
EP-2872668-B1 APPARATUS AND METHOD FOR FILM FORMATION GALLIUM ENTPR PTY LTD (AU) 2018-09-19 EP disclosed
CN-108408261-A The collection device and its method of trimethyl gallium 江苏南大光电材料股份有限公司 2018-08-17 CN disclosed
CN-206225396-U A kind of light emitting diode construction with gradient composition and thickness stress release layer 华南理工大学 2017-06-06 CN disclosed
CN-205985066-U Emitting diode epitaxial structure with little PN junction quantum is built 华南理工大学 2017-02-22 CN disclosed
CN-106356433-A Light-emitting diode structure with component and thickness gradient stress release layer and preparation method of light-emitting diode structure 华南理工大学 2017-01-25 CN disclosed
US-7824628-B2 Self-regenerative process for contaminant removal from ammonia ENTEGRIS, INC. (US) 2010-11-02 US disclosed
EP-1654192-B1 METHOD FOR THE POINT OF USE PRODUCTION OF AMMONIA FROM WATER AND NITROGEN ENTEGRIS INC (US) 2006-11-02 EP disclosed
US-20060243585-A1 Method for the point of use production of ammonia from water and nitrogen JEFFREY J. SPIEGELMAN AND DANIEL ALVAREZ, JR 2006-11-02 US disclosed
EP-1654192-A1 METHOD FOR THE POINT OF USE PRODUCTION OF AMMONIA FROM WATER AND NITROGEN Entegris, Inc. (US) 2006-05-10 EP disclosed
WO-2005009894-A1 METHOD FOR THE POINT OF USE PRODUCTION OF AMMONIA FROM WATER AND NITROGEN ENTEGRIS INC. (US) 2005-02-03 WO disclosed
US-20050019244-A1 Method for the point of use production of ammonia from water and nitrogen ENTEGRIS, INC. 2005-01-27 US disclosed
US-6524544-B1 Contacting contaminated fluid ammonia with adsorbent in vessel to transfer contaminants from ammonia to adsorbent, regenerating adsorbent by contacting with gaseous hydrogen and nitrogen formed by decomposing portion of purified ammonia AERONEX, INC. 2003-02-25 US disclosed
US-20020128148-A1 Self-regenerative process for contaminant removal from ammonia TRUIST BANK, AS NOTES COLLATERAL AGENT 2002-09-12 US disclosed