⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12156948 | 1.00 | — | — | |
| SCHEMBL12156992 | 1.00 | — | — | |
| SCHEMBL22519922 | 0.86 | GAA (0.33) | — | |
| SCHEMBL11159712 | 0.85 | GAA (0.37) | — | |
| SCHEMBL1268692 | 0.84 | GAA (0.33) | — | |
| SCHEMBL11101689 | 0.79 | GAA (0.41) | — | |
| SCHEMBL17635765 | 0.77 | — | — | |
| SCHEMBL11157007 | 0.75 | L3MBTL1 (0.41) | — | |
| SCHEMBL11159127 | 0.75 | ALDH1A1 (0.50) | — | |
| SCHEMBL11169928 | 0.75 | GAA (0.39) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4245834-B1 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A HARD MASK AND/OR AN ETCH-STOP LAYER IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER, COBALT AND/OR TUNGSTEN | BASF SE (DE) | 2025-01-29 | — | — | EP | claimed |
| CN-117317142-A | Self-polymerization product modified lithium ion solid-state battery anode based on alkali-initiated in-situ nucleophilic reaction, and preparation method and application thereof | 武汉大学 | 2023-12-29 | — | — | CN | claimed |
| EP-4245834-A2 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A HARD MASK AND/OR AN ETCH-STOP LAYER IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER, COBALT AND/OR TUNGSTEN | BASF SE (DE) | 2023-09-20 | — | — | EP | claimed |
| EP-3973565-B1 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A HARD MASK AND/OR AN ETCH-STOP LAYER IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER, COBALT AND/OR TUNGSTEN | BASF SE (DE) | 2023-07-19 | — | — | EP | claimed |
| US-20220220421-A1 | COMPOSITION AND PROCESS FOR ELECTIVELY ETCHING A HARD MASK AND/OR AN ETCH-STOP LAYER IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER, COBALT AND/OR TUNGSTEN | BASF SE (DE) | 2022-07-14 | — | — | US | claimed |
| EP-3973565-A1 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A HARD MASK AND/OR AN ETCH-STOP LAYER IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER, COBALT AND/OR TUNGSTEN | BASF SE (DE) | 2022-03-30 | — | — | EP | claimed |
| CN-113785040-A | Compositions and methods for selectively etching hard masks and/or etch stop layers in the presence of low-k materials, copper, cobalt, and/or tungsten layers | 巴斯夫欧洲公司 | 2021-12-10 | — | — | CN | claimed |
| WO-2020234395-A1 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A HARD MASK AND/OR AN ETCH-STOP LAYER IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER, COBALT AND/OR TUNGSTEN | BASF SE (DE) | 2020-11-26 | — | — | WO | claimed |
| EP-2755272-B1 | NON-AQUEOUS ELECTROLYTE SOLUTION FOR LITHIUM SECONDARY BATTERY AND LITHIUM SECONDARY BATTERY COMPRISING SAME | LG CHEMICAL LTD (KR) | 2018-04-18 | — | — | EP | claimed |
| US-9590272-B2 | Non-aqueous electrolyte and lithium secondary battery using the same | LG CHEM, LTD. (KR) | 2017-03-07 | — | — | US | claimed |
| US-20140242472-A1 | NON-AQUEOUS ELECTROLYTE AND LITHIUM SECONDARY BATTERY USING THE SAME | LG CHEM, LTD. (KR) | 2014-08-28 | — | — | US | claimed |
| US-12590274-B2 | Composition and process for selectively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten | BASF SE (DE) | 2026-03-31 | — | — | US | disclosed |
| CN-119542549-A | Low-temperature sodium ion battery | 湖南丰日电源电气股份有限公司 | 2025-02-28 | — | — | CN | disclosed |
| EP-4245834-B1 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A HARD MASK AND/OR AN ETCH-STOP LAYER IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER, COBALT AND/OR TUNGSTEN | BASF SE (DE) | 2025-01-29 | — | — | EP | disclosed |
| US-20240025862-A1 | SUBSTITUTED N-PHENYLURACILS AND SALTS THEREOF, AND USE THEREOF AS HERBICIDAL ACTIVE SUBSTANCES | BAYER AKTIENGESELLSCHAFT (DE) | 2024-01-25 | — | — | US | disclosed |
| EP-0843841-A1 | STRIPPING COMPOSITION | Koninklijke Philips Electronics N.V. (NL) | 1998-05-27 | — | — | EP | disclosed |
| WO-1997048023-A1 | STRIPPING COMPOSITION | PHILIPS ELECTRONICS N.V. (NL) | 1997-12-18 | — | — | WO | disclosed |
| US-5102777-A | Immersion solution consists of a solvent, amine and fatty acid , corrosion and chemical resistance to underlying metal layer | ARDROX INC. (US) | 1992-04-07 | — | — | US | disclosed |
| US-4411841-A | WETTING AGENTS | BAYER AKTIENGESELLSCHAFT (DE) | 1983-10-25 | — | — | US | disclosed |
| US-3932317-A | AMMONIA, SURFACTANTS, SULFOLANES | PHILLIPS PETROLEUM COMPANY (US) | 1976-01-13 | — | — | US | disclosed |