⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5412286 | 0.87 | — | — | |
| SCHEMBL3620782 | 0.87 | — | — | |
| SCHEMBL5706295 | 0.87 | — | — | |
| SCHEMBL895890 | 0.87 | — | — | |
| SCHEMBL9716108 | 0.87 | — | — | |
| SCHEMBL10890316 | 0.87 | — | — | |
| SCHEMBL11576845 | 0.75 | — | — | |
| Fluoride SCHEMBL7090993 | 0.75 | — | — | |
| SCHEMBL5013176 | 0.75 | — | — | |
| SCHEMBL8506328 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 124 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-103594374-B | Semiconductor device manufacturing method | 中国科学院微电子研究所 | 2017-03-08 | — | — | CN | claimed |
| CN-102737999-B | Method for preparing metal-oxide-semiconductor field effect transistor on germanium substrate | INST OF MICROELECTRONICS CAS | 2015-02-11 | — | — | CN | claimed |
| US-8921935-B2 | Semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-12-30 | — | — | US | claimed |
| CN-103594374-A | Semiconductor device manufacturing method | INST OF MICROELECTRONICS CAS | 2014-02-19 | — | — | CN | claimed |
| CN-102737999-A | Method for preparing metal-oxide-semiconductor field effect transistor on germanium substrate | INST OF MICROELECTRONICS CAS | 2012-10-17 | — | — | CN | claimed |
| US-20120175703-A1 | SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-07-12 | — | — | US | claimed |
| CN-102103983-B | Method for preparing metal-oxide-semiconductor capacitor on germanium substrate | INST OF MICROELECTRONICS CAS | 2012-06-20 | — | — | CN | claimed |
| CN-101800178-B | Preparation method of hafnium silicon aluminum oxygen nitrogen high dielectric constant gate dielectric | INST OF MICROELECTRONICS CAS | 2012-05-30 | — | — | CN | claimed |
| CN-102341894-A | Dual metal and dual dielectric integration for metal high-k FETs | IBM | 2012-02-01 | — | — | CN | claimed |
| CN-102103983-A | Method for preparing metal-oxide-semiconductor capacitor on germanium substrate | INST OF MICROELECTRONICS CAS | 2011-06-22 | — | — | CN | claimed |
| CN-101447420-A | Method for preparing high-dielectric-constant gate dielectric film hafnium silicon oxygen nitrogen | INST OF MICROELECTRONICS CAS (CN) | 2009-06-03 | — | — | CN | claimed |
| CN-107799464-B | Semiconductor device and method for manufacturing the same | 三星电子株式会社 | 2023-09-08 | — | — | CN | disclosed |
| CN-110504303-A | Tunneling field effect transistor device | TAIWAN SEMICONDUCTOR MFG CO LTD | 2019-11-26 | — | — | CN | disclosed |
| CN-106057797-B | Mixed active-field gap extends drain MOS transistor | 德克萨斯仪器股份有限公司 | 2019-09-27 | — | — | CN | disclosed |
| US-10269629-B2 | Semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-04-23 | — | — | US | disclosed |
| CN-1934685-A | Stabilization method of high-k dielectric materials | APPLIED MATERIALS INC (US) | 2007-03-21 | — | — | CN | disclosed |
| CN-1757114-A | Charge-trapping memory arrays | SPANSION LLC SUNNYVALE (US) | 2006-04-05 | — | — | CN | disclosed |
| CN-1662674-A | System for depositing a film onto a substrate using a low vapor pressure gas precursor | MATTSON TECH INC (US) | 2005-08-31 | — | — | CN | disclosed |
| US-20040247787-A1 | Effluent pressure control for use in a processing system | MATTSON TECHNOLOGY, INC. | 2004-12-09 | — | — | US | disclosed |
| US-20040025787-A1 | System for depositing a film onto a substrate using a low pressure gas precursor | MATTSON TECHNOLOGY, INC. | 2004-02-12 | — | — | US | disclosed |