SCHEMBL785826

SCHEMBL785826

CCC(C)C(=O)OC1(C)CCCC1

nearest known ligand 0.37

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
CYP19A1 P11511 1/20 0.37
MME P08473 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17146547 1.00 CYP19A1 (0.37) CYP19A1MME
SCHEMBL13483413 0.98 CYP19A1 (0.40) CYP19A1MME
SCHEMBL110528 0.98 CYP19A1 (0.40) CYP19A1MME
SCHEMBL824220 0.98 CYP19A1 (0.40) CYP19A1MME
SCHEMBL13137679 0.98 CYP19A1 (0.40) CYP19A1MME
SCHEMBL9243892 0.90 CYP19A1 (0.31) CYP19A1MME
SCHEMBL9238934 0.88 CYP19A1 (0.33) CYP19A1MME
SCHEMBL9241480 0.87 CYP19A1 (0.30) CYP19A1
SCHEMBL9241485 0.85 CYP19A1 (0.32) CYP19A1
SCHEMBL824352 0.84 CYP19A1 (0.39) CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 536 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230314943-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME MERCK PATENT GMBH (DE) 2023-10-05 US disclosed
US-20230148344-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND FUJIFILM CORPORATION (JP) 2023-05-11 US disclosed
US-11640113-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-05-02 US disclosed
US-20220127225-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-04-28 US disclosed
WO-2019187632-A1 ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND POLYESTER 富士フイルム株式会社 2019-10-03 WO disclosed
US-9952509-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-04-24 US disclosed
US-9946157-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-04-17 US disclosed
US-20180081277-A1 PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM FUJIFILM CORPORATION (JP) 2018-03-22 US disclosed
US-20180051149-A1 HARDCOAT FILM, POLARIZING PLATE, AND TOUCH PANEL DISPLAY FUJIFILM CORPORATION (JP) 2018-02-22 US disclosed
US-20170371244-A1 COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-12-28 US disclosed
US-20070184384-A1 Novel sulfonium compound, photosensitive composition containing the compound and pattern-forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2007-08-09 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070160929-A1 photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography SHIN-ETSU CHEMICAL CO., LTD. 2007-07-12 US disclosed
US-20070148594-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-06-28 US disclosed
US-20070148592-A1 Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
US-7232642-B2 Chemically amplified positive resist composition, a haloester derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-06-19 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed
US-7157207-B2 Polymer, resist material and patterning processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20220127225-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS CACNA1F, SLC6A5, IDUA CYP19A1 3864/4885MME 2525/4885
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning AFF1, FASN, FAR1 CYP19A1 590/4885MME 2055/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.