Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP19A1 | P11511 | 1/20 | 0.40 |
| ▸ | MME | P08473 | 1/20 | 0.33 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.31 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.31 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.31 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL110528 | 1.00 | CYP19A1 (0.40) | CYP19A1MMECHRM2CHRM4CHRM1 | |
| SCHEMBL13483413 | 1.00 | CYP19A1 (0.40) | CYP19A1MMECHRM2CHRM4CHRM1 | |
| SCHEMBL13137679 | 1.00 | CYP19A1 (0.40) | CYP19A1MMECHRM2CHRM4CHRM1 | |
| SCHEMBL785826 | 0.98 | CYP19A1 (0.37) | CYP19A1MME | |
| SCHEMBL17146547 | 0.98 | CYP19A1 (0.37) | CYP19A1MME | |
| SCHEMBL9238934 | 0.90 | CYP19A1 (0.33) | CYP19A1MME | |
| SCHEMBL9243892 | 0.88 | CYP19A1 (0.31) | CYP19A1MME | |
| SCHEMBL9241485 | 0.87 | CYP19A1 (0.32) | CYP19A1 | |
| SCHEMBL9241480 | 0.85 | CYP19A1 (0.30) | CYP19A1 | |
| SCHEMBL824235 | 0.85 | CYP19A1 (0.41) | CYP19A1CHRM2CHRM4CHRM1CHRM3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 156 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9568824-B2 | Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-02-14 | — | — | US | disclosed |
| US-9223204-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern-forming method using the same | FUJITSU CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-9052590-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-06-09 | — | — | US | disclosed |
| US-9040220-B2 | Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-9034556-B2 | Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-05-19 | — | — | US | disclosed |
| US-20150118628-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJIFILM CORPORATION (JP) | 2015-04-30 | — | — | US | disclosed |
| US-9005870-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-04-14 | — | — | US | disclosed |
| US-20150086912-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJIFILM CORPORATION (JP) | 2015-03-26 | — | — | US | disclosed |
| US-8900788-B2 | Resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-02 | — | — | US | disclosed |
| US-20090023097-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20090023095-A1 | NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20090004598-A1 | Resist Composition And Method For Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-01 | — | — | US | disclosed |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080292988-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080268376-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080193871-A1 | Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080090171-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
| US-20070231708-A1 | Polymer Compound, Acid Generator, Positive Resist Composition, and Method for Formation of Resist Patterns | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | GNG2, ACAD9, SCO2 | CYP19A1 441/4885MME 4216/4885CHRM2 1152/4885 |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | RER1, ACAD9, RRS1 | CYP19A1 683/4885MME 3613/4885CHRM2 194/4885 |
| US-20090023095-A1 | NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN | C1R, CYP1B1, C1S | CYP19A1 26/4885MME 4730/4885CHRM2 642/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.