⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7880390 | 1.00 | — | — | |
| SCHEMBL30309884 | 1.00 | — | — | |
| SCHEMBL189406 | 0.82 | — | — | |
| SCHEMBL9135753 | 0.82 | — | — | |
| SCHEMBL965774 | 0.82 | — | — | |
| SCHEMBL1470889 | 0.82 | — | — | |
| SCHEMBL7976443 | 0.82 | — | — | |
| SCHEMBL869255 | 0.82 | — | — | |
| SCHEMBL8685824 | 0.82 | — | — | |
| SCHEMBL1994989 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240243160-A1 | AN INFRARED DETECTOR WITH MULTI-LAYER STRUCTURE BASED ON CMOS PROCESS | BEIJING NORTH GAOYE TECHNOLOGY CO., LTD. (CN) | 2024-07-18 | — | — | US | claimed |
| EP-4345429-A1 | INFRARED DETECTOR HAVING MULTI-LAYER STRUCTURE BASED ON CMOS PROCESS | Beijing North Gaoye Technology.Co., Ltd. (CN) | 2024-04-03 | — | — | EP | claimed |
| CN-113432726-B | Infrared detector with combined columnar structure | 北京北方高业科技有限公司 | 2023-03-24 | — | — | CN | claimed |
| CN-113447140-B | CMOS infrared microbridge detector | 北京北方高业科技有限公司 | 2023-01-06 | — | — | CN | claimed |
| CN-113447148-B | Infrared focal plane detector | 北京北方高业科技有限公司 | 2022-12-02 | — | — | CN | claimed |
| CN-113566982-B | Infrared detector with microbridge structure | 北京北方高业科技有限公司 | 2022-05-24 | — | — | CN | claimed |
| CN-113566982-A | Infrared detector with microbridge structure | 北京北方高业科技有限公司 | 2021-10-29 | — | — | CN | claimed |
| CN-113447146-A | Step type infrared detector | 北京北方高业科技有限公司 | 2021-09-28 | — | — | CN | claimed |
| CN-113447148-A | Infrared focal plane detector | 北京北方高业科技有限公司 | 2021-09-28 | — | — | CN | claimed |
| CN-113447149-A | Infrared microbridge structure and infrared detector | 北京北方高业科技有限公司 | 2021-09-28 | — | — | CN | claimed |
| CN-113447140-A | CMOS infrared microbridge detector | 北京北方高业科技有限公司 | 2021-09-28 | — | — | CN | claimed |
| CN-113432725-A | Infrared detector with multilayer structure based on CMOS (complementary Metal oxide semiconductor) process | 北京北方高业科技有限公司 | 2021-09-24 | — | — | CN | claimed |
| CN-113432726-A | Infrared detector with combined columnar structure | 北京北方高业科技有限公司 | 2021-09-24 | — | — | CN | claimed |
| CN-113340436-A | Uncooled CMOS infrared detector | 北京北方高业科技有限公司 | 2021-09-03 | — | — | CN | claimed |
| US-20240243160-A1 | AN INFRARED DETECTOR WITH MULTI-LAYER STRUCTURE BASED ON CMOS PROCESS | BEIJING NORTH GAOYE TECHNOLOGY CO., LTD. (CN) | 2024-07-18 | — | — | US | disclosed |
| EP-4345429-A1 | INFRARED DETECTOR HAVING MULTI-LAYER STRUCTURE BASED ON CMOS PROCESS | Beijing North Gaoye Technology.Co., Ltd. (CN) | 2024-04-03 | — | — | EP | disclosed |
| CN-113340436-B | Uncooled CMOS infrared detector | 北京北方高业科技有限公司 | 2023-04-14 | — | — | CN | disclosed |
| WO-1997022653-A1 | GERMANOSILOXANE MATERIALS AND OPTICAL COMPONENTS COMPRISING THE SAME | RISEN WILLIAM M JR (US) | 1997-06-26 | — | — | WO | disclosed |
| WO-1997022893-A2 | METHODS AND COMPOSITIONS FOR PRODUCING MICROLENSES AND OPTICAL FILTERS | RISEN WILLIAM M JR (US) | 1997-06-26 | — | — | WO | disclosed |
| US-5437929-A | Germanium phthalocyanine films | EDISON POLYMER INNOVATION CORP. (US) | 1995-08-01 | — | — | US | disclosed |