SCHEMBL7889408

SCHEMBL7889408

NC(=S)S.[Cd].c1ccc(CCc2ccccc2)cc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAOA P21397 4/20 0.50
MAOB P27338 4/20 0.50
SMN1; SMN2 Q16637 2/20 0.48
NPC1 O15118 1/20 0.48
RAB9A P51151 1/20 0.48
TAAR1 Q96RJ0 2/20 0.48
CYP2A6 P11509 1/20 0.48
HTR2A P28223 1/20 0.48
LOXL2 Q9Y4K0 1/20 0.48
TDP1 Q9NUW8 1/20 0.48
LMNA P02545 1/20 0.47
GAA P10253 1/20 0.47
NOS1 P29475 1/20 0.47
HTR3A P46098 1/20 0.47
FFAR1 O14842 1/20 0.45
CTSL P07711 1/20 0.44
ALDH1A1 P00352 1/20 0.44
HPGD P15428 1/20 0.44
ALOX15 P16050 1/20 0.44
ALOX12 P18054 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702198 0.98 MAOA (0.52) MAOAMAOBSMN1; SMN2NPC1RAB9A
Ammonia Solution, Strong SCHEMBL23878420 0.95 MAOA (0.50) MAOAMAOBSMN1; SMN2NPC1RAB9A
SCHEMBL17685698 0.95 MAOA (0.50) MAOAMAOBSMN1; SMN2NPC1RAB9A
SCHEMBL7584903 0.95 MAOA (0.50) MAOAMAOBSMN1; SMN2NPC1RAB9A
SCHEMBL2017045 0.95 MAOA (0.50) MAOAMAOBSMN1; SMN2NPC1RAB9A
SCHEMBL422836 0.95 MAOA (0.50) MAOAMAOBSMN1; SMN2NPC1RAB9A
SCHEMBL7899324 0.86 FFAR1 (0.56) MAOAMAOBSMN1; SMN2TAAR1CYP2A6
SCHEMBL10597986 0.85 MAOA (0.54) MAOAMAOBSMN1; SMN2NPC1RAB9A
SCHEMBL8731548 0.83 FFAR1 (0.58) MAOAMAOBSMN1; SMN2TAAR1CYP2A6
SCHEMBL700765 0.83 CA12 (0.61) MAOAMAOBSMN1; SMN2NPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6211043-B1 THERMAL DECOMPOSITION OF A METAL ORGANIC COMPOUND AND A SOLAR CELL USING THE ABOVE THIN FILM, METAL SULFIDE THIN FILMS OF HIGH PURITY, DENSITY AND QUALITY FOR PHOTOELECTRIC DEVICES OR SOLARCELLS MATSUSHITA BATTERY INDUSTRIAL CO., LTD. (JP) 2001-04-03 US disclosed
EP-1033763-A1 Method of manufacturing a compound semiconductor thin film and a solar cell using the thin film Matsushita Battery Industrial Co., Ltd. (JP) 2000-09-06 EP disclosed