SCHEMBL795295

SCHEMBL795295

C=C(C)C(=O)OCCOc1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.57
APEX1 P27695 1/20 0.57
HTT P42858 1/20 0.57
TDP1 Q9NUW8 1/20 0.57
THRB P10828 2/20 0.47
PKM P14618 1/20 0.44
LMNA P02545 3/20 0.44
TP53 P04637 1/20 0.44
RAB9A P51151 4/20 0.43
MAPT P10636 2/20 0.43
NPC1 O15118 3/20 0.42
SMN1; SMN2 Q16637 3/20 0.42
ELANE P08246 1/20 0.42
TSHR P16473 1/20 0.42
PARP10 Q53GL7 1/20 0.42
MTNR1A P48039 1/20 0.41
MTNR1B P49286 1/20 0.41
MEN1 O00255 2/20 0.41
KMT2A Q03164 2/20 0.41
KDM4E B2RXH2 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8526846 0.91 POLB (0.50) POLBAPEX1HTTTDP1THRB
SCHEMBL12376911 0.89 HTT (0.53) POLBAPEX1HTTTDP1THRB
SCHEMBL21371 0.88 TDP1 (0.61) POLBAPEX1HTTTDP1THRB
SCHEMBL2286970 0.87 HTT (0.46) POLBAPEX1HTTTDP1THRB
SCHEMBL12159389 0.87 HTT (0.48) POLBAPEX1HTTTDP1THRB
SCHEMBL28331865 0.86 TDP1 (0.60) POLBAPEX1HTTTDP1THRB
SCHEMBL454606 0.86 POLB (0.67) POLBAPEX1HTTTDP1THRB
SCHEMBL9807301 0.85 POLB (0.59) POLBAPEX1HTTTDP1THRB
SCHEMBL18960047 0.85 POLB (0.59) POLBAPEX1HTTTDP1THRB
Methacrylic Acid SCHEMBL17911799 0.85 TDP1 (0.58) POLBAPEX1HTTTDP1THRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 231 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240210830-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-27 US disclosed
US-20240210830-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-27 US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 US disclosed
US-8273837-B2 Compound, polymer, and resin composition JSR CORPORATION (JP) 2012-09-25 US disclosed
US-20120219887-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-30 US disclosed
US-20120070783-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND METHOD FOR FORMING RESIST PATTERN JSR CORPORATION (JP) 2012-03-22 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed
US-20110014569-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-01-20 US disclosed
US-20100255420-A1 RADIATION SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2010-10-07 US disclosed
US-20090318652-A1 NOVEL COMPOUND, POLYMER, AND RESIN COMPOSITION JSR CORPORATION (JP) 2009-12-24 US disclosed
US-7629106-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-08 US disclosed
US-7459261-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-02 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090318652-A1 NOVEL COMPOUND, POLYMER, AND RESIN COMPOSITION ERCC4, RAD51, RTF1 POLB 436/4885APEX1 1166/4885HTT 4445/4885
US-20240027903-A1 Resist Material And Patterning Process LBR, HNRNPU, EWSR1 POLB 1145/4885APEX1 2564/4885HTT 153/4885
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RPS4Y1, ETV6, RPS4X POLB 1380/4885APEX1 1814/4885HTT 2417/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.