SCHEMBL795530

SCHEMBL795530

O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)C1CC2C=CC1C2

nearest known ligand 0.32

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.32
LMNA P02545 1/20 0.32
EPHX2 P34913 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL794851 0.90 LMNA (0.33) KDM4ELMNAEPHX2
SCHEMBL794850 0.79 LMNA (0.35) KDM4ELMNAEPHX2
SCHEMBL795565 0.76 LMNA (0.33) KDM4ELMNAEPHX2
SCHEMBL13636351 0.76 KDM4E (0.32) KDM4ELMNA
SCHEMBL13259890 0.76 LMNA (0.33) KDM4ELMNAEPHX2
SCHEMBL15362615 0.74
SCHEMBL18408693 0.74 KDM4E (0.30) KDM4E
SCHEMBL12256448 0.73 USP2 (0.33) KDM4ELMNAEPHX2
SCHEMBL10714009 0.73 LMNA (0.31) LMNA
SCHEMBL17629736 0.73 LMNA (0.31) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8771916-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-07-08 US disclosed
US-8771916-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-07-08 US disclosed
US-8450041-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2013-05-28 US disclosed
US-8450041-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2013-05-28 US disclosed
US-20120070783-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND METHOD FOR FORMING RESIST PATTERN JSR CORPORATION (JP) 2012-03-22 US disclosed
US-20110236828-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-29 US disclosed
US-20110236828-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-29 US disclosed
US-20110014569-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-01-20 US disclosed
US-20100255420-A1 RADIATION SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2010-10-07 US disclosed
US-20100183979-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed
US-20100183979-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed
US-20100183980-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed
US-20100183980-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed