SCHEMBL795565

SCHEMBL795565

O=S(=O)(O)C(C1CC2C=CC1C2)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.33

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.33
KDM4E B2RXH2 1/20 0.33
EPHX2 P34913 2/20 0.32
CYP3A4 P08684 1/20 0.31
CYP2D6 P10635 1/20 0.31
HIF1A Q16665 1/20 0.31
CHRM2 P08172 1/20 0.31
CHRM4 P08173 1/20 0.31
CHRM1 P11229 1/20 0.31
CHRM3 P20309 1/20 0.31
PTGS2 P35354 1/20 0.31
HRH1 P35367 1/20 0.31
KCNH2 Q12809 1/20 0.31
HRH3 Q9Y5N1 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13259890 0.82 LMNA (0.33) LMNAKDM4EEPHX2CYP3A4CYP2D6
SCHEMBL794850 0.81 LMNA (0.35) LMNAKDM4EEPHX2CYP3A4CYP2D6
SCHEMBL12256448 0.79 USP2 (0.33) LMNAKDM4EEPHX2
SCHEMBL794851 0.79 LMNA (0.33) LMNAKDM4EEPHX2CYP3A4CYP2D6
SCHEMBL795530 0.76 KDM4E (0.32) LMNAKDM4EEPHX2
SCHEMBL18714194 0.71 ALDH1A1 (0.35) LMNAKDM4ECYP3A4CYP2D6HIF1A
SCHEMBL13324798 0.71 ALDH1A1 (0.35) LMNAKDM4ECYP3A4CYP2D6HIF1A
SCHEMBL75227 0.71 ALDH1A1 (0.35) LMNAKDM4ECYP3A4CYP2D6HIF1A
SCHEMBL18408693 0.70 KDM4E (0.30) KDM4E
SCHEMBL13259892 0.70 KDM4E (0.37) LMNAKDM4EEPHX2CYP3A4CYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8771916-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-07-08 US disclosed
US-8450041-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2013-05-28 US disclosed
US-8450041-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2013-05-28 US disclosed
US-20120070783-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND METHOD FOR FORMING RESIST PATTERN JSR CORPORATION (JP) 2012-03-22 US disclosed
US-20110236828-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-29 US disclosed
US-20110014569-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-01-20 US disclosed
US-20100183980-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed
US-20100183979-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed
US-20100183979-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed