SCHEMBL7997478

SCHEMBL7997478

CC(C)(C)OC(=O)OC=Cc1ccccc1.OC=Cc1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP2C19 P33261 1/20 0.41
EGFR P00533 1/20 0.40
GLA P06280 1/20 0.39
TDP1 Q9NUW8 1/20 0.39
NPC1 O15118 2/20 0.37
TSHR P16473 1/20 0.37
ALDH1A1 P00352 3/20 0.37
LMNA P02545 3/20 0.37
HDAC3 O15379 2/20 0.37
HDAC4 P56524 2/20 0.37
HDAC1 Q13547 2/20 0.37
HDAC2 Q92769 2/20 0.37
HDAC8 Q9BY41 2/20 0.37
HDAC6 Q9UBN7 2/20 0.37
PLIN1 O60240 2/20 0.37
MAPT P10636 2/20 0.37
RECQL P46063 2/20 0.37
PLIN5 Q00G26 2/20 0.37
ABHD5 Q8WTS1 2/20 0.37
TNKS O95271 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10913657 0.94 CYP2C19 (0.45) CYP2C19EGFRGLATDP1NPC1
SCHEMBL104809 0.94 CYP2C19 (0.45) CYP2C19EGFRGLATDP1NPC1
SCHEMBL8399644 0.82 PPARA (0.38) CYP2C19EGFRGLATDP1NPC1
SCHEMBL6393968 0.80 ALDH1A1 (0.42) CYP2C19EGFRGLATDP1NPC1
SCHEMBL7913182 0.80 MIF (0.48) CYP2C19TDP1NPC1ALDH1A1LMNA
SCHEMBL9128813 0.79 CYP2C19 (0.41) CYP2C19EGFRGLATDP1NPC1
SCHEMBL9499668 0.78 ALDH1A1 (0.49) CYP2C19EGFRGLATDP1NPC1
SCHEMBL377478 0.78 HDAC1 (0.52) EGFRGLATDP1NPC1ALDH1A1
SCHEMBL5932034 0.77 CYP2C19 (0.40) CYP2C19EGFRGLATDP1NPC1
SCHEMBL28634688 0.77 CYP2C19 (0.45) CYP2C19EGFRGLATDP1NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6284438-B1 PROVIDING SEMICONDUCTOR SUBSTRATE; FORMING MATERIAL FILM TO BE PATTERNED ON SEMICONDUCTOR SUBSTRATE; FORMING A PHOTORESIST FILM ON THE MATERIAL FILM BY COATING PHOTORESIST; PATTERNING PHOTORESIST FILM REDUCING SIZE OF OPENING BY THERMAL FLOW SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-09-04 US disclosed
US-5756262-A COATING SUBSTRATE, EXPOSURE THROUGH MASK IN PREFERENTIAL HUMIDITY SETTING, DEVELOPMENT MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1998-05-26 US disclosed