SCHEMBL7999549

SCHEMBL7999549

O=C(CC(=O)OC1CCCCO1)OC1CCCCO1

nearest known ligand 0.39

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.39
KMT2A Q03164 1/20 0.39
LMNA P02545 1/20 0.36
POLB P06746 1/20 0.36
ALDH1A1 P00352 1/20 0.34
EPHX2 P34913 2/20 0.34
HPGD P15428 2/20 0.33
HTT P42858 1/20 0.33
SLC6A3 Q01959 2/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
USP2 O75604 1/20 0.33
CA12 O43570 1/20 0.32
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32
CA9 Q16790 1/20 0.32
NPC1 O15118 1/20 0.32
RAB9A P51151 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10805179 0.98 MEN1 (0.38) MEN1KMT2ALMNAPOLBALDH1A1
SCHEMBL26645786 0.94 POLB (0.41) MEN1KMT2ALMNAPOLBALDH1A1
SCHEMBL8441937 0.91 MEN1 (0.40) MEN1KMT2ALMNAPOLBALDH1A1
SCHEMBL8750705 0.89 MGAM (0.38) MEN1KMT2ALMNAPOLBALDH1A1
SCHEMBL5521474 0.86 MEN1 (0.38) MEN1KMT2ALMNAPOLBALDH1A1
SCHEMBL6299545 0.86 MEN1 (0.38) MEN1KMT2ALMNAPOLBALDH1A1
SCHEMBL20357987 0.85 CHRM2 (0.38) MEN1KMT2ALMNAPOLBALDH1A1
SCHEMBL5679436 0.85 LMNA (0.38) MEN1KMT2ALMNAPOLBALDH1A1
SCHEMBL901642 0.85 MEN1 (0.38) MEN1KMT2ALMNAPOLBALDH1A1
SCHEMBL3981084 0.85 MEN1 (0.38) MEN1KMT2ALMNAPOLBALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6284438-B1 PROVIDING SEMICONDUCTOR SUBSTRATE; FORMING MATERIAL FILM TO BE PATTERNED ON SEMICONDUCTOR SUBSTRATE; FORMING A PHOTORESIST FILM ON THE MATERIAL FILM BY COATING PHOTORESIST; PATTERNING PHOTORESIST FILM REDUCING SIZE OF OPENING BY THERMAL FLOW SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-09-04 US claimed
US-6165680-A Dissolution inhibitor of chemically amplified photoresist and chemically amplified photoresist composition containing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2000-12-26 US claimed
EP-0367131-B1 Light-sensitive composition BASF AG (DE) 1995-02-22 EP claimed
US-5035979-A Radiation-sensitive mixture BASF AKTIENGESELLSCHAFT (DE) 1991-07-30 US claimed
EP-0367131-A2 Light-sensitive composition BASF Aktiengesellschaft (DE) 1990-05-09 EP claimed
US-6284438-B1 PROVIDING SEMICONDUCTOR SUBSTRATE; FORMING MATERIAL FILM TO BE PATTERNED ON SEMICONDUCTOR SUBSTRATE; FORMING A PHOTORESIST FILM ON THE MATERIAL FILM BY COATING PHOTORESIST; PATTERNING PHOTORESIST FILM REDUCING SIZE OF OPENING BY THERMAL FLOW SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-09-04 US disclosed
US-6165680-A Dissolution inhibitor of chemically amplified photoresist and chemically amplified photoresist composition containing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2000-12-26 US disclosed
US-6045970-A A CHEMICALLY AMPLIFIED PHOTORESIST HAVING AN ACID-LABILE GROUP WHICH IS EASILY HYDROLYSIS BY AN ACIDIC CATALYST; FOR FORMING A PATTERN HAVING AN EXCELLENT PROFILE DUE TO THE HIGH CONTRAST AND HIGH THERMAL DECOMPOSITION TEMPERATURE SAMSUNG ELECTRONICS CO., LTD. (KR) 2000-04-04 US disclosed
EP-0367131-B1 Light-sensitive composition BASF AG (DE) 1995-02-22 EP disclosed
US-5035979-A Radiation-sensitive mixture BASF AKTIENGESELLSCHAFT (DE) 1991-07-30 US disclosed
EP-0367131-A2 Light-sensitive composition BASF Aktiengesellschaft (DE) 1990-05-09 EP disclosed
EP-0129163-B1 ARPHAMENINE AND ITS RELATED COMPOUNDS, A PROCESS FOR THEIR PREPARATION AND THEIR USE AS MEDICAMENTS MICROBIAL CHEMISTRY RESEARCH FOUNDATION (JP) 1987-09-16 EP disclosed
EP-0129163-A1 Arphamenine and its related compounds, a process for their preparation and their use as medicaments MICROBIAL CHEMISTRY RESEARCH FOUNDATION (JP) 1984-12-27 EP disclosed