Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10110091 | 0.85 | — | — | |
| SCHEMBL12599428 | 0.84 | CYP4F2 (0.33) | CYP4F2CYP4A11 | |
| SCHEMBL854195 | 0.81 | — | — | |
| SCHEMBL824329 | 0.81 | HTT (0.31) | — | |
| SCHEMBL12012936 | 0.80 | — | — | |
| SCHEMBL14465987 | 0.80 | ELANE (0.35) | CYP4F2CYP4A11 | |
| SCHEMBL10330486 | 0.79 | — | — | |
| SCHEMBL2740758 | 0.79 | CYP4F2 (0.31) | CYP4F2CYP4A11 | |
| SCHEMBL13060559 | 0.79 | — | — | |
| SCHEMBL15214096 | 0.77 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9459528-B2 | Negative tone resist composition for solvent developing and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-10-04 | — | — | US | disclosed |
| US-9244349-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-01-26 | — | — | US | disclosed |
| US-20140363770-A1 | NEGATIVE TONE RESIST COMPOSITION FOR SOLVENT DEVELOPING AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-11 | — | — | US | disclosed |
| US-8632960-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-01-21 | — | — | US | disclosed |
| US-8530598-B2 | Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-09-10 | — | — | US | disclosed |
| US-8519073-B2 | Compound and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-08-27 | — | — | US | disclosed |
| US-8475997-B2 | Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-07-02 | — | — | US | disclosed |
| US-8349534-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-08 | — | — | US | disclosed |
| US-8324331-B2 | Fluorine-containing compound and polymeric compound | DAITO CHEMIX CORPORATION (JP) | 2012-12-04 | — | — | US | disclosed |
| US-8252509-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-28 | — | — | US | disclosed |
| US-7914967-B2 | Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-03-29 | — | — | US | disclosed |
| US-20100310985-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-12-09 | — | — | US | disclosed |
| US-20100233623-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-09-16 | — | — | US | disclosed |
| US-20100168358-A1 | FLUORINE-CONTAINING COMPOUND AND POLYMERIC COMPOUND | DAITO CHEMIX CORPORATION (JP) | 2010-07-01 | — | — | US | disclosed |
| US-20100143844-A1 | Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
| US-20100075249-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-03-25 | — | — | US | disclosed |
| US-20100069590-A1 | COMPOUND AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-03-18 | — | — | US | disclosed |
| US-20090311627-A1 | Resist composition for immersion exposure and method of forming resist pattern using the same | TOKYO OHKA KOGYO CO., LTD. | 2009-12-17 | — | — | US | disclosed |
| US-20090186300-A1 | RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING COPOLYMER | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090047602-A1 | FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-19 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100069590-A1 | COMPOUND AND POLYMERIC COMPOUND | AFF1, F12, AFF4 | CYP4F2 809/4885CYP4A11 1225/4885 |
| US-20100168358-A1 | FLUORINE-CONTAINING COMPOUND AND POLYMERIC COMPOUND | AFF1, AFF2, FLI1 | CYP4F2 450/4885CYP4A11 2280/4885 |
| US-20090047602-A1 | FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN | RFC2, AFF1, RFC1 | CYP4F2 1756/4885CYP4A11 3639/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.